IP Library Granted Patent US 9,728,278
Granted Patent B2
US 9,728,278 · App. 14/681,618 · Granted Aug 8, 2017

Threshold voltage margin analysis

Inventors: Kishore K. Muchherla (San Jose, CA); Sampath K. Ratnam (Boise, ID); Abolfazl Rashwand (Boise, ID)
Assignee: Micron Technology, Inc.
G11C29/50004G06F11/1048G11C5/148G11C16/349G11C16/3418G11C29/42G11C29/52
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Quick Facts
Patent No.
US 9,728,278
App. No.
14/681,618
Granted
Aug 8, 2017
Kind
B2
Abstract

The present disclosure is related to a threshold voltage margin analysis. An example embodiment apparatus can include a memory and a controller coupled to the memory. The controller is configured to determine a previous power loss of a memory to be an asynchronous power loss, and identify a portion of the memory last subject to programming operations during the determined asynchronous power loss. The controller is further configured to perform a threshold voltage (Vt) margin analysis on the portion of the memory responsive to the determined asynchronous power loss.

Claims (80)

1. An apparatus, comprising:

a memory; and

a controller coupled to the memory, wherein the controller is configured to:

determine a previous power loss of the memory to be an asynchronous power loss;

identify a portion of the memory last subject to programming operations during the determined asynchronous power loss;

perform a threshold voltage (Vt) margin analysis on the portion of the memory responsive to the determined asynchronous power loss;

scan for a last written page (LWP);

determine whether error correction code (ECC) errors on the LWP are correctible; and

perform the Vt margin analysis on the LWP responsive to the ECC errors on the LWP being correctible.

2. The apparatus of claim 1 , wherein the apparatus is devoid of hold-up capacitance sufficient to prevent the asynchronous power loss.

3. The apparatus of claim 1 , wherein the controller is further configured to perform the Vt margin analysis prior to performing WRITE operations involving the portion of the memory.

4. The apparatus of claim 1 , further comprising a host computing system coupled to the controller, wherein the controller is further configured to perform the Vt margin analysis prior to performing READ or WRITE operations involving the last written page of the memory responsive to a request by the host computing system.

5. The apparatus of claim 4 , wherein the controller is further configured to determine the previous power loss of the memory to be the asynchronous power loss absent an indication that the previous power loss was initiated by the host computing system.

6. The apparatus of claim 1 , wherein the controller is further configured to perform the Vt margin analysis on a page subsequent to the LWP responsive to the ECC errors on the LWP being correctible.

7. The apparatus of claim 1 , wherein the controller is further configured to perform the Vt margin analysis on a page subsequent to the LWP responsive to the Vt margin analysis on the LWP indicating adequate read window budget (RWB).

8. The apparatus of claim 1 , wherein the controller is further configured to perform READ operations on the page subsequent to the LWP using a read voltage less than a default read voltage responsive to the Vt margin analysis on the LWP indicating adequate RWB.

9. The apparatus of claim 1 , wherein the controller is further configured to perform READ operations on the page subsequent to the LWP using a smallest possible read voltage corresponding to a particular data state responsive to the Vt margin analysis on the LWP indicating adequate RWB.

10. The apparatus of claim 1 , wherein the controller is further configured to increase the Vt for programming operations on the page subsequent to the LWP by a predetermined amount responsive to the Vt margin analysis on the LWP indicating adequate RWB.

11. A method comprising:

determining a previous power loss of a memory to be an asynchronous power loss;

identifying a portion of the memory last subject to programming operations during the determined asynchronous power loss by;

identifying a last written page (LWP) as the portion responsive to ECC errors of the LWP being correctable and Read Window Budget (RWB) margins being inadequate; and

identifying a page subsequent to the LWP as the portion responsive to ECC errors of the LWP being correctable and Read Window Budget (RWB) margins being adequate; and

performing a threshold voltage (Vt) margin analysis on the portion of the memory responsive to the determined asynchronous power loss.

12. The method of claim 11 , wherein performing the Vt margin analysis occurs prior to programming the portion of the memory.

13. The method of claim 11 , wherein identifying a portion of the memory last subject to programming operations during the determined asynchronous power loss includes identifying that the portion of the memory has memory cells that are:

subject to uncorrectable error correction code (ECC) errors;

partially programmed but appear to be erased; or

incompletely programmed within a data state.

14. The method of claim 13 , wherein identifying the portion of the memory last subject to programming operations includes identifying a last written page (LWP) as the portion responsive to the LWP being subject to uncorrectable ECC errors.

15. The method of claim 11 , further comprising reducing a read voltage with respect to a default read voltage for a page subsequent to a last written page (LWP) responsive to the LWP page having adequate Read Window Budget (RWB) margins.

16. The method of claim 11 , further comprising reducing, for a page subsequent to the last written page (LWP), a read voltage to a lowest possible voltage corresponding to a particular data state responsive to the LWP page having adequate Read Window Budget (RWB) margins.

17. The method of claim 12 , further comprising increasing the Vt by a pre-determined amount for a page subsequent to the last written page (LWP) responsive to the LWP page having adequate Read Window Budget (RWB) margins.

18. The method of claim 11 , wherein determining the previous power loss of the memory to be the asynchronous power loss includes ascertaining by the memory absence of an indication that the previous power loss was initiated by a host.

19. An apparatus, comprising:

a memory; and

a controller coupled to the memory, wherein the controller is configured to:

scan for a last written page (LWP) upon power-up after an asynchronous power loss to the memory;

determine errors on the LWP are correctible;

determine whether the LWP has adequate read window budget (RWB) based on a threshold voltage (Vt) margin analysis of the LWP; and

adjust voltages used with respect to one or more pages subsequent to the LWP based on the Vt margin analysis responsive to the determined correctible errors.

20. The apparatus of claim 19 , wherein the controller is further configured to:

determine errors on the LWP are not correctible; and

fill the LWP with random dummy data responsive to the determined not correctible errors.

21. The apparatus of claim 19 , wherein the controller is further configured to:

determine errors on the LWP are not correctible; and

stop using a block including the LWP responsive to the determined not correctible errors.

22. The apparatus of claim 19 , wherein the controller is further configured to utilize a read voltage less than a default read voltage for READ operations involving the one or more pages subsequent to the LWP responsive to the determined adequate RWB.

23. The apparatus of claim 19 , wherein the controller is further configured to utilize a minimum read voltage associated with a particular data state for READ operations involving the one or more pages subsequent to the LWP responsive to the determined adequate RWB.

24. The apparatus of claim 19 , wherein the controller is further configured to utilize a Vt increased from a default value by a pre-determined amount for the page subsequent to the LWP.

25. The apparatus of claim 19 , wherein the controller is further configured to:

determine whether the one or more pages subsequent to the LWP are reading as an empty page; and

fill the LWP with random dummy data responsive to the LWP being determined as not reading as an empty page.

26. The apparatus of claim 25 , wherein the controller is further configured to fill a next ten (10) pages subsequent to the LWP with random dummy data responsive to the LWP being determined as not reading as an empty page.

27. The apparatus of claim 19 , wherein the controller is further configured to:

determine whether the one or more pages subsequent to the LWP are reading as an empty page; and

stop using a block including the LWP responsive to the LWP being determined as not reading as an empty page.

28. The apparatus of claim 19 , wherein the controller is further configured to refresh data on the LWP based on the Vt margin analysis indicating inadequate read window budget for memory cells thereon.

29. An apparatus, comprising:

a memory; and

a controller coupled to the memory, wherein the controller is configured to:

identify a portion of the memory last subject to erase operations at the time of an asynchronous power loss;

perform a threshold voltage (Vt) margin analysis with respect to an erased state on the portion of the memory; and

determine whether the portion of the memory has adequate read window budget (RWB) associated with the erased state based on the Vt margin analysis of the portion of the memory.

30. The apparatus of claim 29 , wherein the controller is further configured to

determine that the portion of the memory is indicated as being erased; and

determine that the portion of the memory is not fully programmed to the erased state.

31. The apparatus of claim 29 , wherein the controller is further configured to determine whether errors on a last written page are error correction code correctable.

32. The apparatus of claim 29 , wherein the controller is further configured to perform an erase verify operation on the portion of the memory using a read voltage that is less than a default erase verify operation read voltage.

33. The apparatus of claim 29 , wherein the controller is further configured to increase the Vt for programming operations associated with the portion of the memory by a predetermined amount.

34. A method comprising:

determining a previous power loss of a memory to be an asynchronous power loss;

identifying a portion of the memory last subject to programming operations during the determined asynchronous power loss;

performing a threshold voltage (Vt) margin analysis on the portion of the memory responsive to the determined asynchronous power loss; and

reducing a read voltage with respect to a default read voltage for a page subsequent to a last written page (LWP) responsive to the LWP page having adequate Read Window Budget (RWB) margins.

35. A method comprising:

determining a previous power loss of a memory to be an asynchronous power loss;

identifying a portion of the memory last subject to programming operations during the determined asynchronous power loss;

performing a threshold voltage (Vt) margin analysis on the portion of the memory responsive to the determined asynchronous power loss; and

increasing the Vt by a pre-determined amount for a page subsequent to the last written page (LWP) responsive to the LWP page having adequate Read Window Budget (RWB) margins.

Assignments (8)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 8, 2015
From: MUCHHERLA, KISHORE K.; RATNAM, SAMPATH K.; RASHWAND, ABOLFAZL
To: MICRON TECHNOLOGY, INC.
Reel/Frame 035361/0633 →
Continuity (2)
Provisional Application 62068364 · Oct 24, 2014
Related Publication 20160118143A1 · Apr 28, 2016