Method of forming a single-crystal nanowire finFET
A semiconductor device and a method of forming the same, the semiconductor device includes a single crystal substrate, a source/drain structure and a nanowire structure. The source/drain structure is disposed on and contacts with the substrate. The nanowire structure is connected to the source/drain structure.
1. A method of forming a semiconductor device, comprising:
forming two dielectric layers and two first material layers stacked alternately on a substrate;
etching the first material layers and the dielectric layers to expose a portion of the substrate;
forming a second material layer on the portion of the substrate;
transforming the first material layers into two single-crystal material layers; and
completely removing the dielectric layer between the two single-crystal material layers and partially removing the dielectric layer between the single-crystal material layers and the substrate to leave a portion of the dielectric remained on the substrate and not in contact with the two single-crystal material layers, and to form a nanowire structure.
2. The method of forming a semiconductor device according to claim 1 , further comprising:
patterning the first material layers before the transforming of the first material layers.
3. The method of forming a semiconductor device according to claim 1 , further comprising:
patterning the first material layers after the transforming of the first material layers.
4. The method of forming a semiconductor device according to claim 1 , wherein the transforming of the first material layers is performed through a thermal process or a laser irradiation process.
5. The method of forming a semiconductor device according to claim 1 , wherein the second material layer directly contacts the portion of the substrate.
6. The method of forming a semiconductor device according to claim 1 , wherein the portion of the substrate comprises a source/drain region or a supporting region.
7. The method of forming a semiconductor device according to claim 1 , further comprising:
performing an anti-punch through implantation process at the portion of the substrate.
8. The method of forming a semiconductor device according to claim 1 , further comprising:
forming a gate electrode at least partially surrounding the nanowire structure; and
forming a gate dielectric layer between the gate electrode and the nanowire structure.
9. The method of forming a semiconductor device according to claim 8 , wherein before the forming of the gate dielectric layer further comprises:
performing an annealing process to round the nanowire structure.
10. The method of forming a semiconductor device according to claim 1 , wherein the first material layers and the second material layer comprise different materials, or the first material layers and the substrate comprise different materials.
11. The method of forming a semiconductor device according to claim 1 , wherein the second material layer is formed through a low temperature epitaxial process.