Semiconductor device
The present invention makes it possible to read a pixel signal at high speed. A pixel array includes a plurality of pixels that store an electrical charge. The amount of stored electrical charge is based on the amount of received light. A first pixel current source and a second pixel current source are coupled in parallel between a ground voltage and a pixel output node on a pixel signal read line. A switch is disposed in a wiring path that couples the pixel output node, the second pixel current source, and the ground voltage.
1. A semiconductor device comprising:
a pixel array having a plurality of pixels that store an electrical charge based on the amount of received light;
a pixel signal read line that is coupled to the pixels;
a first pixel current source and a second pixel current source that are coupled in parallel between a ground voltage and a pixel output node on the pixel signal read line; and
a switch that is disposed in a wiring path that couples the pixel output node, the second pixel current source, and the ground voltage.
2. The semiconductor device according to claim 1 ,
wherein each of the pixels includes:
a photoelectric conversion element that stores an electrical charge based on the amount of received light;
a diffusion section that generates a voltage corresponding to the electrical charge stored in the photoelectric conversion element;
a transfer transistor that transfers the electrical charge stored in the photoelectric conversion element to the diffusion section; and
an amplifying transistor that has a gate coupled to the diffusion section, a drain coupled to a power supply voltage line, and a source, and
wherein the semiconductor device further includes a control section that causes the transfer transistor to turn on and stay on for a predetermined period of time and turns on the switch during a period including at least the period during which the transfer transistor is on.
3. A semiconductor device comprising:
a pixel array having a plurality of pixels that store an electrical charge based on the amount of received light;
a pixel signal read line that is coupled to the pixels;
a pixel current source that is disposed between a ground voltage and a pixel output node on the pixel signal read line; and
a switch that is coupled to a control electrode of the pixel current source;
wherein the switch applies either a first bias voltage or a second bias voltage to the control electrode, the second bias voltage being higher than the first bias voltage.
4. The semiconductor device according to claim 3 ,
wherein each of the pixels includes:
a photoelectric conversion element that stores an electrical charge based on the amount of received light;
a diffusion section that generates a voltage corresponding to the electrical charge stored in the photoelectric conversion element;
a transfer transistor that transfers the electrical charge stored in the photoelectric conversion element to the diffusion section; and
an amplifying transistor that has agate coupled to the diffusion section, a drain coupled to a power supply voltage line, and a source, and
wherein the semiconductor device further includes a control section that causes the transfer transistor to turn on and stay on for a predetermined period of time and controls the switch so as to apply the second bias voltage to the control electrode during a period including at least the period during which the transfer transistor is on.
5. A semiconductor device comprising:
a pixel array having a plurality of pixels that store an electrical charge based on the amount of received light;
a pixel signal read line that is coupled to the pixels;
a pixel current source that is disposed between a ground voltage and a pixel output node on the pixel signal read line; and
a switch that is disposed between the pixel output node and a precharge voltage.
6. The semiconductor device according to claim 5 ,
wherein each of the pixels includes:
a photoelectric conversion element that stores an electrical charge based on the amount of received light;
a diffusion section that generates a voltage corresponding to the electrical charge stored in the photoelectric conversion element;
a transfer transistor that transfers the electrical charge stored in the photoelectric conversion element to the diffusion section;
an amplifying transistor that has agate coupled to the diffusion section, a drain coupled to a power supply voltage line, and a source; and
a selection transistor that is disposed between the pixel signal read line and the source of the amplifying transistor, and
wherein the semiconductor device further includes a control section that causes the transfer transistor to turn on and stay on for a predetermined period of time and turns on the switch during a portion of the period during which the transfer transistor is on or during a period before the transfer transistor turns on.
7. The semiconductor device according to claim 6 ,
wherein the control section turns off the selection transistor during a period during which the switch is on.
8. The semiconductor device according to claim 6 ,
wherein, when a voltage output to the pixel output node varies between a minimum voltage and a maximum voltage in accordance with the amount of electrical charge stored in the photoelectric conversion element, the precharge voltage is equal to the minimum voltage.
9. The semiconductor device according to claim 6 ,
wherein, when a voltage output to the pixel output node varies between a minimum voltage and a maximum voltage in accordance with the amount of electrical charge stored in the photoelectric conversion element, the precharge voltage is higher than the minimum voltage by ¼ the difference between the maximum voltage and the minimum voltage.
10. A semiconductor device comprising:
a pixel array having a plurality of pixels that store an electrical charge based on the amount of received light, the pixels each including: a photoelectric conversion element that stores the electrical charge based on the amount of received light; a diffusion section that generates a voltage corresponding to the electrical charge stored in the photoelectric conversion element; a transfer transistor that transfers the electrical charge stored in the photoelectric conversion element to the diffusion section; and an amplifying transistor that has a gate coupled to the diffusion section, a drain coupled to a power supply voltage line, and a source;
a pixel signal read line that is coupled to the pixels;
a pixel current source that is disposed between a ground voltage and a pixel output node on the pixel signal read line;
a diode element that is disposed between a power supply voltage and a detection node coupled to the drain of the amplifying transistor through the power supply voltage line; and
an amplifier that amplifies the difference between a reference voltage and the voltage of the detection node;
wherein an output from the amplifier is input to a control electrode of the pixel current source.