IP Library Granted Patent US 9,470,642
Granted Patent B2
US 9,470,642 · App. 14/696,852 · Granted Oct 18, 2016

Crystal analysis apparatus, composite charged particle beam device, and crystal analysis method

Inventors: Xin Man (Tokyo, JP); Toshiaki Fujii (Tokyo, JP)
Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
G01N23/203
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Quick Facts
Patent No.
US 9,470,642
App. No.
14/696,852
Granted
Oct 18, 2016
Kind
B2
Abstract

A crystal analysis apparatus includes: a measurement data storage configured to store electron back-scattering pattern (EBSP) data measured at electron beam irradiation points on a plurality of cross-sections of a sample formed substantially in parallel at prescribed intervals; a crystal orientation database configured to accumulate therein information of crystal orientations corresponding to EBSPs; and a map constructing unit that constructs a three-dimensional crystal orientation map based on distribution of crystal orientations in normal directions of a plurality of faces of a polyhedral image having the cross-sections arranged at the prescribed intervals by reading out the crystal orientations in the normal directions of the faces from the crystal orientation database on the basis of the EBSP data stored in the measurement data storage.

Claims (20)

1. A crystal analysis apparatus comprising:

a map constructing unit configured to construct a three-dimensional crystal orientation map on the basis of electron back-scattering pattern (EBSP) data acquired by measuring a sample having crystal grains and crystal orientation data corresponding to EBSPs, wherein in the three-dimensional crystal orientation map, crystal orientations appeared on a first face displaying the crystal grains and crystal orientations appeared on a second face adjacent to the first face are different; and

a display unit for displaying the three-dimensional crystal orientation map.

2. A composite charged particle beam apparatus comprising:

the crystal analysis apparatus according to claim 1 ;

a focused ion beam column configured to emit a focused ion beam to form a plurality of cross-sections of the sample formed substantially in parallel at prescribed intervals;

an electron beam column configured to irradiate the cross-sections with an electron beam; and

an EBSP detector configured to detect an EBSP at an irradiation point of the electron beam on the cross-sections.

3. A crystal analysis apparatus comprising:

a map constructing unit configured to construct a three-dimensional crystal orientation map on the basis of electron back-scattering pattern (EBSP) data acquired by measuring a sample having crystal grains and crystal orientation data corresponding to EBSPs, wherein the three-dimensional crystal orientation map includes a first face displaying the crystal grains and a second face adjacent to the first face, and prescribed colors are allocated in accordance with crystal faces appeared on the respective faces; and

a display unit for displaying the three-dimensional crystal orientation map.

4. A composite charged particle beam apparatus comprising:

the crystal analysis apparatus according to claim 3 ;

a focused ion beam column configured to emit a focused ion beam to form a plurality of cross-sections of the sample formed substantially in parallel at prescribed intervals;

an electron beam column configured to irradiate the cross-sections with an electron beam; and

an EBSP detector configured to detect an EBSP at an irradiation point of the electron beam on the cross-sections.

5. A map displaying method comprising:

measuring an electron back-scattering pattern (EBSP) of a sample having crystal grains;

constructing a three-dimensional crystal orientation map on the basis of EBSP data acquired by the measuring the EBSP and crystal orientation data corresponding to EBSPs, the three-dimensional crystal orientation map including a first face displaying the crystal grains and a second face adjacent to the first face, and prescribed colors being allocated in accordance with crystal faces appeared on the respective faces; and

displaying the three-dimensional crystal orientation map.

Assignments (2)
CHANGE OF ADDRESS Recorded Sep 17, 2025
From: HITACHI HIGH-TECH SCIENCE CORPORATION
To: HITACHI HIGH-TECH SCIENCE CORPORATION
Reel/Frame 072903/0555 →
CHANGE OF NAME Recorded Sep 17, 2025
From: HITACHI HIGH-TECH SCIENCE CORPORATION
To: HITACHI HIGH-TECH ANALYSIS CORPORATION
Reel/Frame 072903/0648 →
Priority Claims (1)
JP 2012-204612 · Sep 18, 2012 · national
Continuity (2)
Continuation 14025985 · Sep 13, 2013
Related Publication 20150226684A1 · Aug 13, 2015