Method of forming metal-containing film
Provided are a semiconductor device manufacturing method and a substrate processing apparatus that are capable of increasing a work function of a film to be formed, in comparison with a related art. The method comprises: (a) supplying a metal-containing gas simultaneously with one selected from the group consisting of an oxygen-containing gas, a halogen-containing gas and combinations thereof into a processing chamber accommodating the substrate; and (b) supplying a nitrogen-containing gas with one of the oxygen-containing gas, the halogen-containing gas and the combinations thereof into the processing chamber.
1. A semiconductor device manufacturing method of forming a metal-containing film on a substrate, the method comprising:
(a) supplying a metal-containing gas simultaneously with one selected from the group consisting of a halogen-containing gas and a combination of an oxygen-containing gas and the halogen-containing gas into a processing chamber accommodating the substrate; and
(b) supplying a nitrogen-containing gas with the one selected from the group consisting of the halogen-containing gas and the combination of the oxygen-containing gas and the halogen-containing gas into the processing chamber,
wherein the metal-containing gas and the nitrogen-containing gas are non-simultaneously supplied.
2. The method according to claim 1 , wherein a ratio of halogen element in the metal-containing film or a ratio of oxygen and the halogen element in the metal-containing film is controlled to be at a predetermined value in the step (b) by adjusting a concentration of at least one of the halogen-containing gas and the combination of the oxygen-containing gas and the halogen-containing gas in the step (b).
3. The method according to claim 1 , wherein a work function of the metal-containing film is controlled by adjusting a ratio of halogen element in the metal-containing film or a ratio of oxygen and the halogen element in the metal-containing film.
4. A semiconductor device manufacturing method of forming a metal-containing film on a substrate, the method comprising:
(a) simultaneously supplying a metal-containing gas and a nitrogen-containing gas into a processing chamber accommodating the substrate to react the metal-containing gas with the nitrogen-containing gas; and
(b) supplying one selected from the group consisting of a halogen-containing gas and a combination of the halogen-containing gas and an oxygen-containing gas into the processing chamber,
wherein a time duration of supplying the metal-containing gas is shorter than that of the nitrogen-containing gas in the step (a), and the steps (a) and (b) are alternately performed as a temporally separated pulse.
5. The method according to claim 4 , a concentration of oxygen in the metal-containing film is controlled by adjusting at least one of a time duration of supplying the oxygen-containing gas and a concentration of the oxygen-containing gas.
6. The method according to claim 5 , a work function of the metal-containing film is adjusted by controlling the concentration of oxygen in the metal-containing film.