Composite filter for visible light transmission and long wave reflection
Systems and methods disclosed herein are directed towards the fabrication of a nanomesh composite filter (NCF) that can be manufactured according to various embodiments, all of which are intended to be fabricated in order to control the transmission, reflection, and absorption of various wavelengths bands. In particular, the disclosed embodiments may be used for heat shielding applications where certain wavelength ranges may be desirable to transmit and others may be desirable to reflect.
1. A composite filter comprising:
a dielectric stack, comprising:
a first dielectric layer and a third dielectric layer of a first composition;
a second dielectric layer and a fourth dielectric layer of a second composition,
wherein the first composition is different from the second composition;
wherein the second dielectric layer is in direct contact with the first dielectric layer and the third dielectric layer, and wherein the third dielectric layer is in direct contact with the second dielectric layer and the fourth dielectric layer; and
a nanomesh structure disposed in direct contact with the first dielectric layer of the dielectric stack, wherein the nanomesh structure comprises a plurality of randomly woven metallic serpentines and a plurality of holes between the serpentines.
2. The composite filter of claim 1 , wherein the plurality of metallic serpentines is comprised of at least one of gold (Au), copper (Cu), or silver (Ag), or alloys and combinations thereof.
3. The composite filter of claim 1 , wherein each serpentine of the plurality of metallic serpentines is less than about 200 nm thick.
4. The composite filter of claim 1 , wherein each serpentine of the plurality of metallic serpentines is greater than about 20 nm thick.
5. The composite filter of claim 1 , wherein each serpentine of the plurality of metallic serpentines is greater than about 50 nm thick.
6. The composite filter of claim 1 , wherein the first composition comprises at least one of TiO 2 , SiO 2 , or Al 2 O 3 , and wherein the second composition is different than the first composition.
7. The composite filter of claim 1 , wherein the first composition comprises a first type of oxide, and wherein the second composition comprises a different type of oxide from the first type of oxide.
8. The composite filter of claim 1 , wherein each hole of the plurality of holes is less than about 5 microns.
9. The composite filter of claim 1 , wherein each hole of the plurality of holes is less than about 1 micron.
10. The composite filter of claim 1 , wherein each hole of the plurality of holes is less than about 0.8 micron.
11. The composite filter of claim 1 , wherein each hole of the plurality of holes is greater than about 0.3 micron.
12. The composite filter of claim 1 , further comprising a substrate in contact with the nanomesh structure.
13. The composite filter of claim 1 , wherein the substrate is transparent.
14. The composite filter of claim 1 , wherein the substrate is opaque.
15. The composite filter of claim 1 , wherein the substrate is semi-transparent.
16. The composite filter of claim 1 , wherein each of the first, second, third, and fourth dielectric layers is substantially parallel to the nanomesh structure.
17. The composite filter of claim 1 , wherein the composite filter has a transmittance of about 85% in a range from 300 nm to 850 nm.
18. The composite filter of claim 1 , wherein the nanomesh structure comprises a flexibility of at least 100% strain.
19. The composite filter of claim 1 , wherein the nanomesh structure comprises a sheet resistance of less than 30 Ω/□.
20. A composite filter comprising:
a dielectric stack, comprising:
a first dielectric layer and a third dielectric layer of a first composition;
a second dielectric layer and a fourth dielectric layer of a second composition,
wherein the first composition is different from the second composition;
wherein the second dielectric layer is in direct contact with the first dielectric layer and the third dielectric layer, and wherein the third dielectric layer is in direct contact with the second dielectric layer and the fourth dielectric layer, wherein the first composition comprises at least one of TiO 2 , SiO 2 , or Al 2 O 3 ; and
a nanomesh structure disposed in direct contact with the first dielectric layer of the dielectric stack, wherein the nanomesh structure comprises a plurality of randomly woven metallic serpentines and a plurality of holes between the serpentines.