Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device, comprising: forming a gate trench on a substrate; forming a gate dielectric layer and a metal gate layer thereon in the gate trench; forming a first tungsten (W) layer on a surface of the metal gate layer, and forming a tungsten nitride (WN) blocking layer by injecting nitrogen (N) ions; and filling with W through an atomic layer deposition (ALD) process. The blocking layer prevents ions in the precursors from aggregating on an interface and penetrating into the metal gate layer and the gate dielectric layer. At the same time, adhesion of W is enhanced, a process window of W during planarization is increased, reliability of the device is improved and the gate resistance is further reduced.
1. A method for manufacturing a semiconductor device, comprising:
forming a gate trench on a substrate;
forming a gate dielectric layer and a metal gate layer thereon in the gate trench;
forming a first tungsten (W) layer on a surface of the metal gate layer, and
forming a tungsten nitride (WN) blocking layer by injecting nitrogen (N) ions into the first W layer; and
forming a second tungsten (W) layer on the tungsten nitride (WN) blocking layer through an Atomic Layer Deposition (ALD) process;
wherein the WN blocking layer is used to prevent elements in the precursors when forming the second W layer from diffusing downwards; and
wherein in forming the WN blocking layer, the N content in WN is controlled, such that elements in the metal gate layer is less than or equal to 5%, or a diffusion depth of the elements is less than or equal to 5% of a total thickness of the metal gate layer when forming the second W layer.
2. The method according to claim 1 , wherein forming a WN blocking layer comprises:
performing heating in an ALD reaction chamber;
forming the first W layer through the ALD process; and
forming the WN blocking layer by injecting the N ions and performing annealing.
3. The method according to claim 2 , wherein a temperature range of heating is from 250° to 350°.
4. The method according to claim 1 , further comprising: between forming a metal gate layer and forming the second W layer,
performing preheating; and
forming a Si diffusion blocking layer by decomposing Si-containing gas.
5. The method according to claim 1 , wherein forming the second W layer through an ALD process comprises: forming the second W layer by alternatively performing a first reaction and a second reaction, wherein, reactant gas for the first reaction comprises Si-containing reactant gas, and reactant gas for the second reaction comprises borane (B 2 H 6 ).
6. The method according to claim 5 , wherein the Si-containing gas is silicane (SiH 4 ) or silicon ethane (Si 2 H 6 ).
7. The method according to claim 5 , wherein a deposition rate of the second reaction is less than a deposition rate of the first reaction.
8. The method according to claim 1 , wherein forming the second W layer through an ALD process further comprises:
pre-inducing SiH4 or Si2H6 to process a surface of the device and react with silicon fluoride (WF); and
inducing B 2 H 6 for reaction.
9. The method according to claim 1 , further comprising: between forming the gate dielectric layer and forming the metal gate layer, forming a cap layer, to block metal ions of an upper layer from diffusing into the gate dielectric layer.
10. The method according to claim 9 , wherein the cap layer includes Ti, Ta, TaN, TiN, WN, or a combination thereof.