IP Library Granted Patent US 9,634,056
Granted Patent B2
US 9,634,056 · App. 14/700,752 · Granted Apr 25, 2017

Digital x-ray detector and method for repairing a bad pixel thereof

Inventor: Jang Jong Ho (Seoul, KR)
Assignee: HYDIS TECHNOLOGIES CO., LTD.
H01L27/14663H01L27/14603H01L27/14632H01L27/14636H01L27/14689H01L31/105
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Quick Facts
Patent No.
US 9,634,056
App. No.
14/700,752
Granted
Apr 25, 2017
Kind
B2
Abstract

Provided herein is a digital x-ray detector and a method for repairing a bad pixel thereof, the detector including a substrate; a gate line and a data line formed on the substrate such that the gate line and the data line intersect each other to form a pixel domain; a thin film transistor formed within the pixel domain such that the thin film transistor is adjacent to a portion where the gate line and the data line intersect each other, the thin film transistor including a gate electrode, an active layer, a source electrode and a drain electrode; a PIN diode which is formed within the pixel domain and which includes a lower electrode connected to the source electrode of the thin film transistor, a PIN layer formed on the lower electrode, and an upper electrode formed on the PIN layer; a bias line connected to the upper electrode of the PIN diode; and a scintillator arranged above the PIN diode, wherein on at least one of a surface of the drain electrode which faces the PIN diode and a surface of the PIN diode which faces the drain electrode, a groove is formed such that it expands a distance between the drain electrode and the PIN diode.

Claims (12)

1. A digital x-ray detector comprising:

a substrate;

a gate line and a data line formed on the substrate such that the gate line and the data line intersect each other to form a pixel domain;

a thin film transistor formed within the pixel domain such that the thin film transistor is adjacent to a portion where the gate line and the data line intersect each other, the thin film transistor including a gate electrode, an active layer, a source electrode and a drain electrode;

a PIN diode which is formed within the pixel domain and which includes a lower electrode connected to the source electrode of the thin film transistor, a PIN layer formed on the lower electrode, and an upper electrode formed on the PIN layer;

a bias line connected to the upper electrode of the PIN diode; and

a scintillator arranged above the PIN diode,

wherein on at least one of a surface of the drain electrode which faces the PIN diode and a surface of the PIN diode which faces the drain electrode, a groove is formed such that it expands a distance between the drain electrode and the PIN diode.

2. The detector according to claim 1 ,

wherein the groove is formed on an area between the data line and the active layer of the thin film transistor.

3. The detector according to claim 2 ,

wherein the groove comprises a first groove formed on the drain electrode side, and a second groove formed on the PIN diode side, the first groove and the second groove facing each other.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 7, 2015
From: HO, JANG JONG
To: HYDIS TECHNOLOGIES CO., LTD.
Reel/Frame 035587/0044 →
Priority Claims (1)
KR 10-2015-0014359 · Jan 29, 2015 · national
Continuity (1)
Related Publication 20160225814A1 · Aug 4, 2016