Fully integrated CMOS-compatible photodetector with color selectivity and intrinsic gain
A metal-semiconductor-metal photodetecting device and method of manufacturing a metal-semiconductor-metal photodetecting device that includes a p-type silicon substrate with an oxide layer disposed on the p-type silicon substrate. Schotty junctions are disposed adjacent to the oxide layer on the p-type silicon substrate and a plasmonic grating disposed on the oxide layer. The plasmonic grating provides wavelength range selectability for the photodetecting device.
1. A metal-semiconductor-metal photodetecting device, comprising:
a p-type silicon substrate;
an oxide layer disposed on the p-type silicon substrate;
Schottky junctions disposed adjacent to the oxide layer on the p-type silicon substrate; and
a plasmonic grating disposed on the oxide layer,
wherein the plasmonic grating provides wavelength range selectability for the photodetecting device,
wherein the plasmonic grating comprises:
a film, and
a plurality of perforations through the film.
2. The device of claim 1 , wherein the oxide layer is ˜50 nm thick.
3. The device of claim 1 , wherein the plasmonic grating is ˜50 nm thick.
4. The device of claim 1 , wherein the Schottky junctions are formed using photolithography.
5. The device of claim 1 , wherein the Schottky junctions are comprised of Aluminum.
6. The device of claim 1 , wherein the plasmonic grating is formed by e-beam lithography.
7. The device of claim 1 , wherein the plasmonic grating is comprised of Aluminum.
8. The device of claim 1 , wherein a full width half maximum (FWHM) of a responsivity of the photodetecting device is less than 120 nm.
9. The device of claim 1 , wherein the plasmonic grating is comprised of Aluminum.
10. The device of claim 1 , wherein the device has a responsivity of at least 7.67 A/W.
11. The device of claim 1 , wherein the plasmonic grating provides photocurrent enhancement.