Method for manufacturing silicon-containing thin film
The present invention relates to a method for forming a silicon-containing thin film using a chlorosilane compound represented by Si n Cl 2n+2 (wherein, n is an integer of from about 3 to about 10), and a high-quality silicon nitride thin film can be formed to a uniform thickness on a surface including a protrusion or recess having a high aspect ratio by an atomic layer deposition method using an ammonia gas at a low temperature of particularly about 560° C. or less.
1. A method to form a silicon-containing thin film, comprising:
supplying a gas including a chlorosilane compound represented by the chemical formula of Si n Cl 2n+2 (wherein n is an integer of from 4 to 10) and a reactant gas including an element selected from the group consisting of nitrogen, oxygen, carbon, and their combinations to a substrate including at least one fine trench having an aspect ratio of 1 or more and a width of 1 μm or less to form the silicon-containing thin film having a uniform film thickness on a surface of the substrate including a surface of the fine trench, and
wherein the silicon-containing thin film is formed by an atomic layer deposition (ALD) method, and wherein a thickness of the silicon-containing thin film is about 80 nm or less, and
wherein a temperature of the substrate is in a range of temperature at which the ALD using the gas including the chlorosilane compound is carried out.
2. The method to form a silicon-containing thin film of claim 1 , wherein the thickness of the silicon-containing thin film is about 30 nm or less.
3. The method to form a silicon-containing thin film of claim 1 , wherein the substrate is maintained at a temperature of from an ambient temperature to about 800° C.
4. The method to form a silicon-containing thin film of claim 1 , wherein the substrate is maintained at a temperature of from an ambient temperature to about 560° C.
5. The method to form a silicon-containing thin film of claim 1 , wherein the substrate is maintained at a temperature of from about 280° C. to about 520° C.
6. The method to form a silicon-containing thin film of claim 1 , wherein the substrate is maintained at a temperature of from about 300° C. to about 450° C.
7. The method to form a silicon-containing thin film of claim 1 , wherein the reactant gas includes a member selected from the group consisting of an ammonia (NH 3 )-containing gas, an alkylamine-containing gas, an oxygen (O 2 )-containing gas, an ozone (O 3 )-containing gas, a water (H 2 O) vapor-containing gas, and their combinations.
8. The method to form a silicon-containing thin film of claim 1 , wherein the gas including chlorosilane compound and the reactant gas are alternately supplied to the substrate.
9. The method to form a silicon-containing thin film of claim 1 , wherein the silicon-containing thin film includes a silicon oxide thin film, a silicon nitride thin film, or a silicon carbonitride thin film.
10. The method to form a silicon-containing thin film of claim 1 , wherein the chlorosilane compound includes a member selected from the group consisting of Si 4 Cl 10 , and Si 5 Cl 12 .
11. The method to form a silicon-containing thin film of claim 10 , wherein the reactant gas includes ammonia, and the silicon-containing thin film includes a silicon nitride thin film.
12. A method to form a silicon-containing thin film, comprising:
supplying a gas including a chlorosilane compound represented by the chemical formula of Si 3 Cl 8 and a reactant gas including to a substrate including at least one fine trench having an aspect ratio of 1 or more and a width of 1 μm or less to form the silicon-containing thin film having a uniform film thickness on a surface of the substrate including a surface of the fine trench, and
wherein the silicon-containing thin film is formed by an atomic layer deposition (ALD) method, and wherein a thickness of the silicon-containing thin film is about 80 nm or less, and
wherein a temperature of the substrate is maintained at a temperature from about 300° C. to about 520° C.
13. The method of claim 12 , wherein the temperature of the substrate is maintained at a temperature from about 300° C. to about 440° C.
14. The method of claim 12 , wherein the reactant gas includes ammonia (NH 3 ).