Semiconductor-on-insulator with back side support layer
View Patent ↗In one embodiment, an integrated circuit with a signal-processing region is disclosed. The integrated circuit comprises a silicon-on-insulator die singulated from a silicon-on-insulator wafer. The silicon on insulator die comprises an active layer, an insulator layer, a substrate, and a strengthening layer. The substrate consists of an excavated substrate region, and a support region, the support region is in contact with the insulator layer. The excavated region covers a majority of the signal-processing region of the integrated circuit.
1. An integrated circuit comprising:
a silicon-on-insulator die singulated from a silicon-on-insulator wafer, the silicon-on-insulator die having an active layer, a substrate, and an insulator layer, wherein the active layer has a clock circuit region and a signal-processing region comprising a plurality of devices, and wherein the insulator layer is in contact with the substrate and the active layer;
an excavated substrate region formed in the substrate under the plurality of devices in the signal processing region;
a support region formed in the substrate outside of the excavated substrate region and under the clock circuit region; and
a strengthening layer at least partially located in the excavated substrate region;
wherein a total surface area of the excavated substrate region exceeds a total surface area of a majority of the signal-processing region, further wherein the excavated substrate region and the support region form a pattern below the active layer, and the pattern includes a single frame around the silicon-on-insulator die.
2. The integrated circuit from claim 1 , wherein the total surface area of the excavated substrate region exceeds a total surface area of a majority of the active layer.
3. The integrated circuit from claim 1 , wherein:
the signal-processing region includes a set of radio frequency switches; and
the excavated substrate region and the support region form a pattern below the signal-processing region.
4. The integrated circuit from claim 1 , wherein:
the signal-processing region includes a set of radio frequency switches;
the set of radio frequency switches includes a set of transistors;
the excavated substrate region and the support region form a pattern below the signal-processing region; and
the pattern includes a set of frames that is aligned with the set of transistors.
5. The integrated circuit from claim 1 , wherein the strengthening layer has a thermal conductivity in excess of 50 W/m*K.
6. The integrated circuit from claim 1 , wherein the strengthening layer is congruent with the excavated substrate region.
7. The integrated circuit from claim 1 , wherein:
the insulator layer has an excavated insulator region; and
the strengthening layer is at least partially located in the excavated insulator region.
8. The integrated circuit from claim 7 , wherein the strengthening layer comprises at least one of the following materials: diamond, diamond-like carbon, silicon carbide, aluminum oxide, aluminum nitride, beryllium oxide, beryllium nitride, or carbon nanotubes.
9. The integrated circuit from claim 7 , wherein the strengthening layer is in contact with a metal layer in the silicon-on-insulator die.
10. The integrated circuit from claim 9 , wherein the strengthening layer has a thermal conductivity in excess of 50 W/m*K and is electrically insulating.
11. A method comprising:
providing a silicon-on-insulator wafer having a silicon-on-insulator die, wherein the silicon-on-insulator die has an active layer, a substrate, and an insulator layer, wherein the active layer has a clock circuit region and a signal-processing region comprising a plurality of devices, and wherein the insulator layer is in contact with the substrate and the active layer;
removing a portion of the substrate from the silicon-on-insulator wafer to form an excavated substrate region under the plurality of devices in the substrate and a support region outside of the excavated substrate region and under the clock circuit region in the substrate;
depositing a strengthening layer on the excavated substrate region; and
singulating the silicon-on-insulator die from the silicon-on-insulator wafer;
wherein a total surface area of the excavated substrate region covers a surface area of the signal-processing region exceeding a total area of a majority of the signal processing region, further wherein the excavated substrate region and the support region form a pattern below the active layer, and the pattern includes a single frame around the silicon-on-insulator die.
12. The method from claim 11 , wherein the excavated substrate region covers a second surface area of the active layer.
13. The method from claim 11 , wherein the removing of the portion of the substrate is conducted without using a handle substrate for the silicon-on-insulator wafer.
14. The method from claim 11 , wherein:
the signal-processing region includes a set of radio frequency switches; and
the excavated substrate region and the support region form a pattern below the signal-processing region.
15. The method from claim 11 , wherein:
the signal-processing region includes a set of radio frequency switches;
the set of radio frequency switches includes a set of transistors
the excavated substrate region and the support region form a pattern below the signal-processing region; and
the pattern includes a set of frames that is aligned with the set of transistors.
16. The method from claim 11 , wherein the strengthening layer has a thermal conductivity in excess of 50 W/m*K.
17. The method from claim 11 , wherein the strengthening layer is congruent with the excavated substrate region.
18. The method from claim 11 , further comprising the step of:
removing a portion of the insulator layer from the silicon-on-insulator wafer to form an excavated insulator;
wherein the depositing of the strengthening layer on the excavated substrate region also deposits the strengthening layer on the excavated insulator region.
19. The method from claim 18 , wherein the strengthening layer comprises at least one of the following materials: diamond, diamond-like carbon, silicon carbide, aluminum oxide, aluminum nitride, beryllium oxide, beryllium nitride, or carbon nanotubes.
20. The method from claim 18 , the strengthening layer comprising:
a set of isolated thermal dissipation channels; wherein each of the isolated thermal dissipation channels contacts a layer of metal in the active layer.
21. The method from claim 20 , wherein the strengthening layer has a thermal conductivity in excess of 50 W/m*K and is electrically insulating.