Method for accurately determining the thickness and/or elemental composition of small features on thin-substrates using micro-XRF

1. A method for X-ray Fluorescence (XRF) analysis, comprising:

directing an X-ray beam onto a sample;

measuring an XRF signal excited from the sample, in a reference measurement in which the sample comprises one or more first layers formed on a substrate, so as to produce a reference XRF spectrum;

re-measuring the XRF signal excited from the sample in a target measurement after one or more second layers are formed on the substrate in addition to the first layers, so as to produce a target XRF spectrum that comprises first spectral components contributed by the first layers and second spectral components contributed by the second layers;

reducing a level of contribution of the first spectral components to the target XRF spectrum using the reference XRF spectrum; and

estimating a parameter of at least one of the second layers using the target XRF spectrum in which the level of contribution of the first spectral components has been reduced.

2. The method according to claim 1 , wherein the parameter comprises a thickness of at least one of the second layers.

3. The method according to claim 1 , wherein the parameter comprises an elemental composition of at least one of the second layers.

4. The method according to claim 1 , wherein the first and second layers are formed on respective first and second opposite surfaces of the substrate, such that the second surface faces the X-ray beam.

5. The method according to claim 4 , wherein the contribution of the first spectral components to the target XRF spectrum is caused by excitation in the first layers by the X-ray beam after penetrating the substrate.

6. The method according to claim 1 , wherein the first or second layers comprise Under Bump Metallization (UBM) layers or bumps.

7. The method according to claim 1 , wherein reducing the level of contribution of the first spectral components comprises estimating a contribution of a first spectral line in the reference XRF spectrum to an intensity of a second spectral line in the target XRF spectrum that overlaps the first spectral line.

8. The method according to claim 7 , wherein estimating the contribution of the first spectral line comprises estimating an attenuation of the first spectral line by the second layers.

9. The method according to claim 8 , wherein estimating the attenuation comprises iteratively evaluating the attenuation as a function of respective estimated parameters of the second layers.

10. The method according to claim 9 , wherein iteratively evaluating the attenuation comprises, in an initial iteration, evaluating the function using nominal parameters of the second layers.

11. An apparatus for X-ray Fluorescence (XRF) analysis, comprising:

an X-ray source, which is configured to direct an X-ray beam onto a sample;

a detector, which is configured to measure an XRF signal excited from the sample in a reference measurement in which the sample comprises one or more first layers formed on a substrate, and to re-measure the XRF signal excited from the sample in a target measurement after one or more second layers are formed on the substrate in addition to the first layers; and

a processor, which is configured to produce a reference XRF spectrum from the reference measurement, to produce from the target measurement a target XRF spectrum that comprises first spectral components contributed by the first layers and second spectral components contributed by the second layers, to reduce a level of contribution of the first spectral components to the target XRF spectrum using the reference XRF spectrum, and to estimate a parameter of at least one of the second layers using the target XRF spectrum in which the level of contribution of the first spectral components has been reduced.

12. The apparatus according to claim 11 , wherein the parameter comprises a thickness of at least one of the second layers.

13. The apparatus according to claim 11 , wherein the parameter comprises an elemental composition of at least one of the second layers.

14. The apparatus according to claim 11 , wherein the first and second layers are formed on respective first and second opposite surfaces of the substrate, such that the second surface faces the X-ray beam.

15. The apparatus according to claim 14 , wherein the contribution of the first spectral components to the target XRF spectrum is caused by excitation in the first layers by the X-ray beam after penetrating the substrate.

16. The apparatus according to claim 11 , wherein the first or second layers comprise Under Bump Metallization (UBM) layers or bumps.

17. The apparatus according to claim 11 , wherein the processor is configured to reduce the level of contribution of the first spectral components by estimating a contribution of a first spectral line in the reference XRF spectrum to an intensity of a second spectral line in the target XRF spectrum that overlaps the first spectral line.

18. The apparatus according to claim 17 , wherein the processor is configured to estimate the contribution of the first spectral line by estimating an attenuation of the first spectral line by the second layers.

19. The apparatus according to claim 18 , wherein the processor is configured to estimate the attenuation by iteratively evaluating the attenuation as a function of respective estimated parameters of the second layers.

20. The apparatus according to claim 19 , wherein the processor is configured to evaluate the function in an initial iteration using nominal parameters of the second layers.