Semiconductor device and operation method for same
A semiconductor device, includes first, second, and third switching elements. The third switching element comprises first and second terminals. Each of the first and second switching elements comprise a unified ion conductor, a first electrode disposed to contact the ion conductor and supply metal ions thereto, and a second electrode disposed to contact the ion conductor and is less susceptible to ionization than the first electrode. The first electrodes of the first switching element and the second switching element are electrically connected. The first terminal of the third switching element is electrically connected to only the first electrodes which are electrically connected, or the second electrode of the first switching element and the second electrode of the second switching element are electrically connected. The first terminal of the third switching element is electrically connected to only the second electrodes which are electrically connected.
1. A semiconductor device, comprising:
a first switching element;
a second switching element, where the first switching element and the second switching element keep a same resistance state to work as one unified unit; and
at least one third switching element, comprising a volatile switching element, that functions to program the first and second switching elements,
wherein the third switching element comprises a first terminal and a second terminal,
wherein each of the first switching element and the second switching element comprises an ion conductor, a first electrode which is disposed so as to have contact with the ion conductor and supplies metal ions to the ion conductor, and a second electrode which is disposed so as to have contact with the ion conductor and is less susceptible to ionization than the first electrode, and
wherein:
the first electrode of the first switching element and the first electrode of the second switching element are electrically connected to each other, and the first terminal of the third switching element is electrically connected to only the first electrodes which are electrically connected to each other, or
the second electrode of the first switching element and the second electrode of the second switching element are electrically connected to each other, and the first terminal of the third switching element is electrically connected to only the second electrodes which are electrically connected to each other.
2. The semiconductor device according to claim 1 , wherein the first electrode of the first switching element and the first electrode of the second switching element are electrically connected to each other.
3. The semiconductor device according to claim 2 , wherein the first electrode of the first switching element and the first electrode of the second switching element are unified.
4. The semiconductor device according to claim 1 , wherein the second electrode of the first switching element and the second electrode of the second switching element are electrically connected to each other.
5. The semiconductor device according to claim 2 , wherein the second electrode of the first switching element and the second electrode of the second switching element are unified.
6. The semiconductor device according to claim 1 , wherein:
the ion conductor has a first and a second major surface; and
both the first electrode of the first switching element and the first electrode of the second switching element are disposed so as to have contact with the first major surface of the ion conductor.
7. The semiconductor device according to claim 6 , wherein the first electrode of the first switching element and the first electrode of the second switching element are electrically connected to each other.
8. The semiconductor device according to claim 7 , wherein the first electrode of the first switching element and the first electrode of the second switching element are unified.
9. The semiconductor device according to claim 6 , wherein both the second electrode of the first switching element and the second electrode of the second switching element are disposed so as to have contact with the second major surface of the ion conductor.
10. The semiconductor device according to claim 9 , wherein the second electrode of the first switching element and the second electrode of the second switching element are electrically connected to each other.
11. The semiconductor device according to claim 10 , wherein the second electrode of the first switching element and the second electrode of the second switching element are unified.
12. The semiconductor device according to claim 1 , wherein:
both the first electrode of the first switching element and the first electrode of the second switching element are formed over a semiconductor substrate; and
the ion conductor is formed over the first electrode of the first switching element and the first electrode of the second switching element.
13. The semiconductor device according to claim 12 , wherein the first electrode of the first switching element and the first electrode of the second switching element are electrically connected to each other.
14. The semiconductor device according to claim 13 , wherein the first electrode of the first switching element and the first electrode of the second switching element are unified.
15. The semiconductor device according to claim 12 , wherein both the second electrode of the first switching element and the second electrode of the second switching element are formed over the ion conductor.
16. The semiconductor device according to claim 15 , wherein the second electrode of the first switching element and the second electrode of the second switching element are electrically connected to each other.
17. The semiconductor device according to claim 16 , wherein the second electrode of the first switching element and the second electrode of the second switching element are unified.