Ultra low noise materials and devices for cryogenic superconductors and quantum bits
Materials, devices, methods of use and fabrication thereof are disclosed. The materials are particularly well suited for application in superconducting devices and quantum computing, due to ability to avoid undesirable effects from inherent noise and decoherence. The materials are formed from select isotopes having zero nuclear spin into a single crystal-phase film or layer of thickness depending on the desired application of the resulting device. The film/layer may be suspended or disposed on a substrate. The isotopes may be enriched from naturally-occurring sources of isotopically mixed elemental material(s). The single crystal is preferably devoid of structural defects such as grain boundaries, inclusions, impurities and lattice vacancies. Device configurations may be formed from the layer according to a predetermined pattern using lithographic and/or milling techniques. An optional protective layer may be deposited on some or all of the device to avoid formation of oxides and/or patinas on surfaces of the device.
1. A material, comprising:
one or more isotopes exhibiting zero nuclear spin; and
a Pt film, the Pt film having a thickness in a range from about 0.01 nm to about 1.0 nm;
wherein the one or more isotopes are selected from a group consisting of: 12 C, 14 N, 15 N, 46 Ti, 48 Ti, 50 Ti, 64 Zn, 66 Zn, 68 Zn, 70 Zn, 70 Ge, 72 Ge, 74 Ge, 76 Ge, 92 Mo, 94 Mo, 96 Mo, 98 Mo, 100 Mo, 102 Pd, 104 Pd, 106 Pd, 108 Pd, 110 Pd, 123 Te, 128 Te, 180 W 182 W, 184 W, 186 W, 190 Pt, 192 Pt, 194 Pt, 196 Pt, 198 Pt, 204 Pb, and 206 Pb;
wherein the one or more isotopes are formed into a single crystal consisting essentially of a single crystalline phase; and
wherein the Pt film coats a surface of the single crystal.
2. The material as recited in claim 1 , wherein the single crystal is structurally configured as a layer having a thickness from about 10 nm to about 10 um.
3. The material as recited in claim 1 , wherein the single crystal excludes one or more of:
grain boundaries;
impurities;
crystalline lattice vacancies;
surface defects;
oxides formed on a surface of the single crystal; and
patinas formed on the surface of the single crystal.
4. The material as recited in claim 1 , wherein the single crystal exhibits physical characteristics of formation by epitaxy.
5. The material as recited in claim 1 , wherein a surface of the single crystal excludes oxides and patinas.
6. The material as recited in claim 1 , wherein each of the one or more isotopes is characterized by a spherical nucleus.
7. The material as recited in claim 1 , wherein the material is mechanically self-supporting; and
wherein the material is physically and spatially isolated from any substrate material.
8. The material as recited in claim 1 , further comprising a substrate material coupled to the material, wherein the substrate material comprises a dielectric.
9. The material as recited in claim 1 , wherein at least one of the one or more isotopes is present in the form of an alloy.
10. The material as recited in claim 9 , wherein the alloy includes Si.
11. A material, comprising:
one or more isotopes exhibiting zero nuclear spin;
wherein the one or more isotopes are selected from a group consisting of: molybdenum, tungsten, palladium, tellurium, platinum, silicon, lead, tin, zinc, indium, titanium, carbon, and oxygen;
wherein the one or more isotopes are present as an alloy having a composition selected from MoSi, PdTe, PdSi, PtSi, and WSi;
wherein the one or more isotopes are formed into a single crystal consisting essentially of a single crystalline phase; and
wherein all atoms of the alloy are characterized by zero nuclear spin.
12. A material, comprising:
one or more isotopes exhibiting zero nuclear spin;
wherein the one or more isotopes are present in the form of one or more alloys selected from: PdSi, WSi, MoSi, PtSi, PdTe, and PdTe 2 ; and
wherein the one or more isotopes are formed into a single crystal consisting essentially of a single crystalline phase.
13. A material, comprising:
one or more isotopes exhibiting zero nuclear spin; and
a Pt film, the Pt film having a thickness in a range from about 0.01 nm to about 1.0 nm;
wherein the one or more isotopes are selected from a group consisting of: 12 C, 14 N, 15 N, 46 Ti, 48 Ti, 50 Ti, 64 Zn, 66 Zn, 68 Zn, 70 Zn, 70 Ge, 72 Ge, 74 Ge, 76 Ge, 92 Mo, 94 Mo, 96 Mo, 98 Mo, 100 Mo, 102 Pd, 104Pd, 106 Pd, 108 Pd, 110 Pd, 123 Te, 128 Te, 180 W 182 W, 184 W, 186 W, 190 Pt, 192 Pt, 194 Pt, 196 Pt, 198 Pt, 204 Pb, and 206 Pb;
wherein the one or more isotopes are formed into a single crystal consisting essentially of a single crystalline phase;
wherein the Pt film coats a surface of the single crystal;
wherein the material is physically and spatially isolated from any substrate material; and
wherein grain boundaries of the material exclude fluctuators associated with nuclear orientation effects comprising:
particles exhibiting glass-like properties;
oxides; and
patinas.
14. The material as recited in claim 13 , wherein at least one of the one or more isotopes is present in the form of an alloy.
15. The material as recited in claim 14 , wherein the alloy includes Si.