System and method for temperature sensing of three-dimensional integrated circuit
A system and a method for temperature sensing of three-dimensional integrated circuits are revealed. The three-dimensional integrated circuit is formed by stacking of a plurality of chip layers that execute specific functions. The chip layer includes a master layer and at least one slave layer. The master layer is disposed with a master temperature sensor while a first thermal conductive part is arranged at the slave layer where heat is detected. The first thermal conductive part and the master temperature sensor are connected by a thermal conductive structure. Thereby temperature of various points at different chip layers is conducted to the same chip layer by Through Silicon Vias to be measured and calibrated. The design complexity and the implementation cost of the temperature sensing system are significantly reduced.
1. A system for temperature sensing of three-dimensional integrated circuits comprising;
a plurality of stacked chip layers, each chip layer executing predetermined functions; the plurality of stacked chip layers including a master layer and at least one slave layer;
a master temperature sensor arranged on the master layer;
at least one first thermal conductive part disposed on the slave layer positioned to conduct heat generated at the slave layer;
at least one second thermal conductive part disposed on the master layer and connected to the first thermal conductive part by a thermal conductive structure extending between the slave and master layers; and
the first thermal conductive part being coupled to the master temperature sensor by the thermal conductive structure and the second thermal conductive part.
2. The system as claimed in claim 1 , wherein the first thermal conductive part and the second thermal conductive part are made from metal.
3. The system as claimed in claim 1 , wherein the second thermal conductive part is arranged with a slave temperature sensor; temperature variance of the slave temperature sensor caused by changes of temperature, manufacturing processes or voltage being calibrated by the master temperature sensor.
4. The system as claimed in claim 3 , wherein the thermal conductive structure is formed by metal processing.
5. The system as claimed in claim 4 , wherein the thermal conductive structure formed by Copper Damascene.
6. The system as claimed in claim 5 , wherein the thermal conductive structure is a through silicon via (TSV).
7. A method for temperature sensing of three-dimensional integrated circuits comprising:
disposing a master temperature sensor on a master layer and arranging at least one first thermal conductive part on a slave layer for conducting heat generated at the slave layer;
disposing at least one second thermal conductive part on the master layer;
forming a thermal conductive structure extending between the slave and master layers to couple the first thermal conductive part on the slave layer to the second thermal conductive part on the master layer; and
conducting heat collected by the first thermal conductive part to the master temperature sensor through the thermal conductive structure and the second thermal conductive part.
8. The method as claimed in claim 7 , wherein the second thermal conductive part is arranged with a slave temperature sensor; temperature variance of the slave temperature sensor caused by changes of temperature, manufacturing processes or voltage being calibrated by the master temperature sensor.