Surrounded emitter bipolar device
A surrounded emitter bipolar device includes a substrate having a p-epitaxial (p-epi) layer thereon, and a p-base in the p-epi layer. A two dimensional (2D) array of p-base contacts (base units) include the p-base, wherein each base unit includes an outer dielectric structure surrounding an inner dielectric isolation ring. The inner dielectric isolation ring surrounds an n region (n+moat). A first portion of the n+moats are collector (C) units, and a second portion of the n+moats are emitter (E) units. Each of the E units is separated from a nearest neighbor E unit by a C unit.
1. An electronic device, comprising:
a substrate having a p-type epitaxial (p-epi) layer thereon;
a p-base in said p-epi layer;
a two dimensional (2D) array of base units each including one base contact of a corresponding plurality of base contacts, said one base contact being connected to said p-base and encircling a dielectric isolation ring and an n+ moat that is located in an area enclosed by said dielectric isolation ring; and
a base grid that includes a regular array of said base contacts and separates each base unit dielectric isolation ring from a dielectric isolation ring of a nearest neighbor base unit.
2. The device of claim 1 , further comprising an n+ buried layer (NBL), under said p-base in said p-epi layer, connected to an outer collector ring that encloses an area including said base grid and said array of base units.
3. The device of claim 1 , further comprising:
a collector electrode having a plurality of collector fingers, each collector finger connected to each base contact in a first corresponding column of said base contacts; and
an emitter electrode having a plurality of emitter fingers, each emitter finger located between neighboring collector fingers, and each emitter finger connected to a proper subset of said p-base contacts in a second corresponding column of said base contacts,
wherein said base contacts connected to said collector electrode are designated C units, and said base contacts connected to said emitter electrode are designated E units.
4. The device of claim 2 , further comprising an outer deep trench isolation ring (outer DT ring) framing said 2D array, and a deep n+ diffusion region located adjacent a sidewall of said outer DT ring and between a surface nwell region and said NBL.
5. The device of claim 3 , wherein n+ moats of said C units are doped differently from n+ moats of said E units.
6. An integrated circuit (IC), comprising:
a substrate having a p-type epitaxial (p-epi) layer thereon;
functional circuitry formed using said p-epi layer and configured to realize and carry out a functionality and having a plurality of terminals including at least a first terminal and a ground terminal;
at least one transistor formed in said p-epi layer and coupled between said first terminal and said ground terminal in parallel with said functional circuitry, said transistor including:
a p-base in said p-epi layer;
a two dimensional (2D) array of base units each including one base contact of a corresponding plurality of base contact, said one base contact being connected to said p-base and encircling a dielectric isolation ring and an n+ moat that is located within said dielectric isolation ring, and
a base grid that includes a regular array of said base contacts and separates each dielectric isolation ring from a nearest neighbor dielectric isolation ring.
7. The IC of claim 6 , further comprising an n+ buried layer (NBL) located under said p-base in said p-epi layer and connected to an outer collector ring that encloses an area including said base grid and said array of base units.
8. The IC of claim 6 , further comprising:
a collector electrode having a plurality of collector fingers, each collector finger connected to each base contact in a first corresponding column of said base contacts; and
an emitter electrode having a plurality of emitter fingers, each emitter finger located between neighboring collector fingers, and each emitter finger connected to alternating base contacts in a second corresponding column of said base contacts,
wherein said base contacts connected to said collector electrode are designated C units, and said base contacts connected to said emitter electrode are designated E units.
9. The IC of claim 7 , further comprising an outer deep trench isolation ring (outer DT ring) framing said 2D array, and a deep n+ diffusion region located adjacent a sidewall of said outer DT ring and between a surface nwell region and said NBL.
10. The IC of claim 6 , wherein said n+ moats have a same doping.
11. The IC of claim 8 , wherein the n+ moat of each of said C units further includes a relatively shallow additional n-type doping and a relatively deep additional p-type doping that is spaced apart from an edge of said moat to provide a buried Zener diode within said moat.
12. The IC of claim 6 , wherein said functional circuitry comprises a BiMOS IC device.
13. The integrated circuit of claim 6 , further comprising an n+ buried layer (NBL) located under said p-base in said p-epi layer and connected via a deep n+ diffusion region to a collector electrode ring that surrounds said plurality of base contacts and is connected to a proper subset of said p-base contacts.
14. The device of claim 3 , wherein said C units have a total area that is between two (2) times and five (5) times a total area of said E units.
15. The bipolar device of claim 3 , wherein said collector electrode includes a collector ring around said plurality of base contacts and connected to the collector fingers.
16. A transistor, comprising:
a substrate having a well of a first conductivity type;
an array of moats within said well, said moats having a second conductivity type; and
a grid region of said first conductivity type within said well, said grid region being doped to a higher carrier concentration than said well and including a plurality of continuous intersecting vertical and horizontal linear doped regions that separate each of said moats from a nearest neighbor moat.
17. The transistor of claim 16 , further comprising a ring electrode surrounding said moats and connected via a vertical current path to a buried doped layer of the second conductivity type underlying the well.
18. The transistor of claim 16 , wherein said first conductivity type is p-type, and said second conductivity type is n-type.
19. The transistor of claim 16 , further comprising a plurality of collector fingers interdigitated with a plurality of emitter fingers, each emitter finger being connected to a first subset of moats (E units), and each collector finger being connected to a second subset of moats (C units), wherein each of said E units is separated from a nearest neighboring E unit by one of said C units.
20. The transistor of claim 19 , wherein the moat of each of said C units includes a buried Zener diode.