Pre-computation system and method for transition domain characterization within a floating random walk based multi-dielectric capacitance extraction methodology
An apparatus for performing multi-tier domain pre-characterization for floating random walk capacitance extraction of a semiconductor structure includes a processor configured to recursively execute a floating random walk algorithm, over a plurality of points for a plurality of conductors, to permit determination of a potential at a plurality of points on a Gaussian surface around each of a plurality of conductors and determination of a coupling capacitance between the plurality of conductors, each iteration of the floating random walk algorithm comprising selection of a domain about an initial boundary point on the Gaussian surface of the respective one of the plurality of conductors and determination of a new boundary point on the new domain, from which a successive boundary point is selected with a corresponding successive domain centered thereabout, this process continuing until a corresponding successive domain terminates at a boundary having a known potential, whereupon the processor determines the potential at the initial boundary point on the Gaussian surface of the respective one of the plurality of conductors, wherein at least one domain during each floating random walk is matched by the processor to one of a plurality of pre-characterized domains, the matching of the selected domain with the one of a plurality of pre-characterized domains utilizing a smart sweep method, a single dielectric method, a two-dielectric method, a three-dielectric method or an averaging method.
1. A circuit design method comprising:
performing multi-tier domain pre-characterization for floating random walk capacitance extraction of a semiconductor structure comprising one or more dielectric layers by:
generating a plurality of pre-characterized floating random walk domains;
obtaining a Green's function of each of the pre-characterized floating random walk domains;
storing the Green's function of each of the pre-characterized floating random walk domains in a database; and
performing a floating random walk procedure using the domains stored in the database, said performing including matching at least one domain during a floating random walk to one of the plurality of pre-characterized domains, said matching including determining which of a smart sweep method, a single dielectric method, a two-dielectric method, a three-dielectric method or an averaging method is most suitable and applying the most suitable method; and
extracting and verifying a layout of a circuit using the pre-characterized floating random walk domains in the database.
2. The method of claim 1 , wherein the plurality of pre-characterized floating random walk domains comprise five tiers according to a number and order of dielectric layers within each domain.
3. The method of claim 2 , wherein one tier of pre-characterized floating random walk domains comprises domains with all combinations of all consecutive dielectric layers of the semiconductor structure.
4. The method of claim 2 , wherein one tier of pre-characterized floating random walk domains comprises domains with each of the dielectric layers of the semiconductor structure.
5. The method of claim 2 , wherein one tier of pre-characterized floating random walk domains comprises domains with two dielectric layers of the semiconductor structure in which a dielectric interface varies to produce all combinations of dielectric interface positions.
6. The method of claim 2 , wherein one tier of pre-characterized floating random walk domains comprises domains with three dielectric layers of the semiconductor structure in which two dielectric interfaces vary to produce all combinations of dielectric interface positions.
7. The method of claim 2 , further comprising, for one tier of pre-characterized floating random walk domains:
dividing a floating random walk domain in slices of equal height; and
calculating the weights average permittivity value of each slice.
8. The method of claim 1 , further comprising characterizing floating random walk domains that are not part of the database of the pre-characterized domains by obtaining their Green's function and storing the obtained Green's function in the database.
9. The method of claim 1 , wherein the floating random walk domains are characterized by their Green's function using Finites Differences method.
10. A circuit design apparatus comprising:
a memory;
a processor operable to perform multi-tier domain pre-characterization for floating random walk capacitance extraction of a semiconductor structure comprising one or more dielectric layers by:
generating a plurality of pre-characterized floating random walk domains;
obtaining a Green's function of each of the pre-characterized floating random walk domains;
storing the Green's function of each of the pre-characterized floating random walk domains in the memory; and
performing a floating random walk procedure using the domains stored in the database, said performing including matching at least one domain during a floating random walk to one of the plurality of pre-characterized domains, said matching including determining which of a smart sweep method, a single dielectric method, a two-dielectric method, a three-dielectric method or an averaging method is most suitable and applying the most suitable method; and
extracting and verifying a layout of a circuit using the pre-characterized floating random walk domains in the database.
11. The method of claim 10 , wherein the plurality of pre-characterized floating random walk domains comprise five tiers according to a number and order of dielectric layers within each domain.
12. The method of claim 11 , wherein one tier of pre-characterized floating random walk domains comprises domains with all combinations of all consecutive dielectric layers of the semiconductor structure.
13. The method of claim 11 , wherein one tier of pre-characterized floating random walk domains comprises domains with each of the dielectric layers of the semiconductor structure.
14. The method of claim 11 , wherein one tier of pre-characterized floating random walk domains comprises domains with two dielectric layers of the semiconductor structure in which a dielectric interface varies to produce all combinations of dielectric interface positions.
15. The method of claim 11 , wherein one tier of pre-characterized floating random walk domains comprises domains with three dielectric layers of the semiconductor structure in which two dielectric interfaces vary to produce all combinations of dielectric interface positions.
16. The method of claim 11 , further comprising, for one tier of pre-characterized floating random walk domains:
dividing a floating random walk domain in slices of equal height; and
calculating the weights average permittivity value of each slice.
17. The method of claim 10 , further comprising characterizing floating random walk domains that are not part of the database of the pre-characterized domains by obtaining their Green's function and storing the obtained Green's function in the database.
18. The method of claim 10 , wherein the floating random walk domains are characterized by their Green's function using Finites Differences method.
19. An apparatus comprising:
a memory operable to store a multi-tier database of pre-characterized floating random walk domains; and
a processor configured to:
extract, using a floating random walk method, a semiconductor device comprising multiple conductors embedded in multiple dielectric layers;
match floating random walk domain requests to pre-characterized floating random walk domains in the multi-tier database by determining which of a smart sweep method, a single dielectric method, a two-dielectric method, a three-dielectric method or an averaging method is most suitable and applying the most suitable method; and
characterize floating random walk domains that are not matched in the multi-tier database by their Green's function using a Finites Differences method.
20. The method of claim 19 , wherein the plurality of pre-characterized floating random walk domains comprise five tiers according to a number and order of dielectric layers within each domain.
21. The method of claim 20 , wherein one tier of pre-characterized floating random walk domains comprises domains with all combinations of all consecutive dielectric layers of the semiconductor structure.
22. The method of claim 20 , wherein one tier of pre-characterized floating random walk domains comprises domains with each of the dielectric layers of the semiconductor structure.
23. The method of claim 20 , wherein one tier of pre-characterized floating random walk domains comprises domains with two dielectric layers of the semiconductor structure in which a dielectric interface varies to produce all combinations of dielectric interface positions.
24. The method of claim 20 , wherein one tier of pre-characterized floating random walk domains comprises domains with three dielectric layers of the semiconductor structure in which two dielectric interfaces vary to produce all combinations of dielectric interface positions.
25. The method of claim 21 , further comprising, for one tier of pre-characterized floating random walk domains:
dividing a floating random walk domain in slices of equal height; and
calculating the weights average permittivity value of each slice.
26. The method of claim 19 , further comprising characterizing floating random walk domains that are not part of the database of the pre-characterized domains by obtaining their Green's function and storing the obtained Green's function in the database.
27. The method of claim 19 , wherein the floating random walk domains are characterized by their Green's function using Finites Differences method.