Light emitting diode and fabrication method thereof

1. A light emitting diode comprising: a substrate; a light-emitting epitaxial layer from bottom to up including semiconductor material layers of a first confinement layer, a light-emitting layer, and a second confinement layer over the substrate; a current blocking layer over a portion of the light-emitting epitaxial layer; a transparent conducting structure over the current blocking layer that extends to the light-emitting epitaxial layer surface and includes a light-emitting region and a non-light-emitting region, in which, the non-light-emitting region corresponds to the current blocking layer with a thickness larger than that of the light-emitting region, thereby ensuring current spreading performance and reducing working voltage and light absorption; and a P electrode over the non-light-emitting region of the transparent conducting structure,

wherein the transparent conducting structure comprises: a first transparent conducting layer, with a pattern corresponding to that of the current blocking layer, formed over the current blocking layer; and a second transparent conducting layer that clads over the first transparent conducting layer and the current blocking layer and extends to the light-emitting epitaxial layer surface, in which, a lower surface area of the second transparent conducting layer is larger than an upper surface area of the current blocking layer.

2. The light emitting diode of claim 1 , wherein a contact surface between the second transparent conducting layer and the P electrode is a rough surface.

3. The light emitting diode of claim 1 , wherein the first transparent conducting layer is about 300-5000 Å thick.

4. The light emitting diode of claim 1 , wherein the second transparent conducting layer is about 300-5000 Å thick.

5. A method of fabricating a light emitting diode, comprising:

1) providing a substrate, over which, forming a light-emitting epitaxial layer through epitaxial growth, deposited with a first confinement layer, a light-emitting layer, and a second confinement layer from bottom to up;

2) forming a current blocking layer over a portion of the light-emitting epitaxial layer;

3) fabricating a transparent conducting structure over the current blocking layer and extending to the light-emitting epitaxial layer surface, in which, a non-light-emitting region corresponds to the current blocking layer and a light-emitting region is in direct contact with the light-emitting epitaxial layer, and a thickness of the non-light-emitting region is larger than that of the light-emitting region, thereby ensuring current spreading performance and reducing working voltage and light absorption; and

4) fabricating a P electrode over the non-light-emitting region of the transparent conducting structure,

wherein Step 3) comprises:

forming a first transparent conducting layer over the current blocking layer;

forming a second transparent conducting layer over the first transparent conducting layer and extending to the light-emitting epitaxial layer surface,

thereby forming a transparent conducting structure, in which, the non-light-emitting region comprises a first and a second transparent conducting layer and the light-emitting region does not comprise the first transparent conducting layer.

6. The method of claim 5 , wherein the first transparent conducting layer is formed with evaporating deposition, and the second transparent conducting layer is formed with magnetron sputtering, thereby forming a rough structure at the contact surface between the second transparent conducting layer and the P electrode.

7. The method of claim 5 , wherein the first transparent conducting layer is formed with magnetron sputtering, and the second transparent conducting layer is formed with evaporating deposition, thereby forming a rough structure at the contact surface between the second transparent conducting layer and the P electrode.

8. The method of claim 5 , wherein the first transparent conducting layer is about 300-5000 Å thick.

9. The method of claim 5 , wherein the second transparent conducting layer is about 300-5000 Å thick.

10. A light-emitting system comprising a plurality of light-emitting diode, each light-emitting diode including: a substrate; a light-emitting epitaxial layer from bottom to up including semiconductor material layers of a first confinement layer, a light-emitting layer, and a second confinement layer over the substrate; a current blocking layer over a portion of the light-emitting epitaxial layer; a transparent conducting structure over the current blocking layer that extends to the light-emitting epitaxial layer surface and includes a light-emitting region and a non-light-emitting region, in which, the non-light-emitting region corresponds to the current blocking layer with a thickness larger than that of the light-emitting region, thereby ensuring current spreading performance and reducing working voltage and light absorption; and a P electrode over the non-light-emitting region of the transparent conducting structure,

wherein the transparent conducting structure comprises: a first transparent conducting layer, with a pattern corresponding to that of the current blocking layer, formed over the current blocking layer; and a second transparent conducting layer that clads over the first transparent conducting layer and the current blocking layer and extends to the light-emitting epitaxial layer surface, in which, a lower surface area of the second transparent conducting layer is larger than an upper surface area of the current blocking layer.

11. The system of claim 10 , wherein a contact surface between the second transparent conducting layer and the P electrode is a rough surface.

12. The system of claim 10 , wherein the first transparent conducting layer is about 300-5000 Å thick.

13. The system of claim 10 , wherein the second transparent conducting layer is about 300-5000 Å thick.