Resistive memory sensing
View Patent ↗The present disclosure includes apparatuses and methods for sensing a resistive memory cell. A number of embodiments include performing a sensing operation on a memory cell to determine a current value associated with the memory cell, applying a programming signal to the memory cell, and determining a data state of the memory cell based on the current value associated with the memory cell before applying the programming signal and a current value associated with the memory cell after applying the programming signal.
1. A method for sensing a resistive memory cell, comprising:
performing a sensing operation on a memory cell to determine a first current associated with the memory cell;
applying a programming signal to the memory cell to produce a second current associated with the memory cell, wherein the programming signal is a signal applied to program the memory cell to a particular data state and the memory cell is programmed to the particular data state;
outputting an output signal that corresponds to a difference between the first current and the second current associated with the memory cell; and
determining a data state of the memory cell based on the output signal.
2. The method of claim 1 , wherein the method includes performing another sensing operation on the memory cell to determine the second current associated with the memory cell after applying the programming signal to the memory cell.
3. The method of claim 2 , wherein determining the data state of the memory cell includes determining the data state of the memory cell corresponds to a data state other than the particular data state associated with the programming signal if the current associated with the memory cell before applying the programming signal is different than the current associated with the memory cell after applying the programming signal by at least a threshold amount.
4. The method of claim 2 , wherein determining the data state of the memory cell includes determining the data state of the memory cell corresponds to the particular data state associated with the programming signal if the current associated with the memory cell before applying the programming signal is different than the current associated with the memory cell after applying the programming signal by less than a threshold amount.
5. The method of claim 1 , wherein applying the programming signal includes applying a set programming signal to the memory cell.
6. The method of claim 1 , wherein applying the programming signal includes applying a reset programming signal to the memory cell.
7. The method of claim 2 , wherein determining the data state of the memory cell includes determining the data state corresponds to a data state other than the particular data state associated with the programming signal if a ratio of the current associated with the memory cell after applying the programming signal and the current associated with the memory cell before applying the programming signal is at least a threshold amount.
8. The method of claim 2 , wherein determining the data state of the memory cell includes determining the data state of the memory cell corresponds to the particular data state associated with the programming signal if a ratio of the current associated with the memory cell after applying the programming signal and the current associated with the memory cell before applying the programming signal is less than a threshold amount.
9. The method of claim 1 , wherein the method includes determining the data state of the memory cell via a controller.
10. A method for sensing a resistive memory cell, comprising:
performing a sensing operation on a memory cell to determine a first current associated with the memory cell;
applying a set programming signal to the memory cell, wherein the set programming signal is a signal applied to program the memory cell to a particular set data state and the memory cell is programmed to the particular set data state;
performing another sensing operation on the memory cell to determine a second current associated with the memory cell after applying the set programming signal to the memory cell;
outputting an output signal that corresponds to the difference between the first current associated with the memory cell and the second current associated with the memory cell after applying the set programming signal; and
determining a data state of the memory cell based on the output signal.
11. The method of claim 10 , wherein determining the data state of the memory cell includes determining the memory cell is at a reset data state if the first current associated with the memory cell before applying the set programming signal is different than the second current associated with the memory cell after applying the set programming signal by at least a threshold amount.
12. The method of claim 10 , wherein determining the data state of the memory cell includes determining the memory cell is at the particular set data state if the first current value associated with the memory cell before applying the set programming signal is different than the second current associated with the memory cell after applying the set programming signal by less than a threshold amount.
13. The method of claim 10 , wherein the method includes applying a reset programming signal to the memory cell if the first current associated with the memory cell before applying the set programming signal is different than the second current associated with the memory cell after applying the set programming signal by at least a threshold amount.
14. The method of claim 10 , wherein determining the data state of the memory cell includes determining whether the second current associated with the memory cell after applying the set programming signal is at least 10 times larger than the first current associated with the memory cell before applying the set programming signal.
15. An apparatus, comprising:
an array of resistive memory cells; and
a controller coupled to the array and configured to:
perform a first sensing operation on a memory cell to determine a first current associated with the memory cell before applying a programming signal to the memory cell;
apply the programming signal to the memory cell, wherein the programming signal is applied to the memory cell to program the memory cell to a particular set data state and the memory cell is programmed to the particular set data state;
perform a second sensing operation on the memory cell to determine a second current associated with the memory cell after applying the programming signal to the memory cell;
output an output signal that corresponds to a difference between the first current and the second current; and
determine the data state of the memory cell based on the output signal.
16. The apparatus of claim 15 , wherein the controller is configured to determine that the memory cell is at a reset data state if the first current is different than the second current by at least a threshold amount.
17. The apparatus of claim 15 , wherein the controller is configured to determine that the memory cell is at the particular set data state if the first current is different than the second current by less than a threshold amount.
18. The apparatus of claim 15 , wherein the controller is configured to determine that the memory cell is at the particular set data state if the first current is different than the second current by at least a threshold amount.
19. The apparatus of claim 15 , wherein the controller is configured to determine that the memory cell is at a reset data state if the first current is different than the second current by less than a threshold amount.
20. The apparatus of claim 15 , wherein the controller is configured to determine that:
the memory cell is in a reset data state when the ratio is at least a threshold amount and the programming signal applied to the memory cell is a set programming signal; and
the memory cell is in the particular set data state when the ratio is less than the threshold amount and the programming signal applied to the memory cell is a set programming signal.