MEMBRANE SUPPORTS WITH REINFORCEMENT FEATURES
A sample support structure with integrated support features and methods of making and using the reinforced membrane. The sample support structures are useful for supporting samples for analysis using microscopic techniques, such as electron microscopy, optical microscopy, x-ray microscopy, UV-VIS spectroscopy and nuclear magnetic resonance (NMR) techniques.
1 . A sample support structure comprising a membrane region and at least one spacer thereon, wherein the membrane region and at least one spacer thereon consist of the same material and are monolithic.
2 . The sample support structure of claim 1 wherein the membrane region and the at least one spacer comprise a material selected from the group consisting of monocrystalline silicon, polycrystalline silicon, amorphous silicon, alumina, quartz, fused silica, boron nitride, silicon carbide, metals, ceramics, silicon nitride, aluminum nitride, gallium nitride, graphene, graphite, aluminum, titanium, copper, tungsten, diamond, aluminum oxide, conducting oxides, and combinations thereof.
3 . The sample support structure of claim 1 further comprising a framing region surrounding the membrane region.
4 . The sample support structure of claim 3 wherein the framing region comprises a material selected from the group consisting of monocrystalline silicon, polycrystalline silicon, amorphous silicon, alumina, quartz, fused silica, boron nitride, silicon carbide, metals, ceramics, silicon nitride, aluminum nitride, gallium nitride, graphene, graphite, aluminum, titanium, copper, tungsten, diamond, aluminum oxide, conducting oxides, and combinations thereof.
5 . The sample support structure of claim 1 , wherein the membrane region and the at least one spacer consist of silicon nitride.
6 . The sample support structure of claim 1 , wherein the imaging occurs through the membrane region.
7 . The sample support structure of claim 1 , wherein the thickness of the framing region is in a range from about 100 μm to about 750 μm, the thickness of the at least one spacer is in a range from about 25 nm to 5000 nm, and the thickness of the membrane region is less than the thickness of the at least one spacer.
8 . The sample support structure of claim 1 , wherein the at least one spacer surrounds the membrane region, either as one spacer that encloses the membrane region or as more than one individual spacer that encircles the membrane region.
9 . A method of making a sample support structure, the method comprising the following steps in any order which produces a sample support structure comprising a membrane region and at least one spacer thereon, wherein the membrane region and at least one spacer thereon consist of the same material and are monolithic:
providing a substrate having a first surface and a second surface;
depositing a first support layer on the first surface of the substrate;
depositing a second support layer on the second surface of the substrate;
forming at least one spacer by thinning a region of the second support layer to provide the at least one spacer adjacent to the membrane region, wherein the at least one spacer is thicker than the membrane region;
removing a portion of the first support layer to expose the substrate; and
removing a portion of the substrate to yield a framing region.
10 . The method of claim 9 wherein the substrate comprises a material selected from the group consisting of monocrystalline silicon, polycrystalline silicon, amorphous silicon, alumina, quartz, fused silica, boron nitride, silicon carbide, metals, ceramics, silicon nitride, aluminum nitride, gallium nitride, graphene, graphite, aluminum, titanium, copper, tungsten, diamond, aluminum oxide, conducting oxides, and combinations thereof.
11 . The method of claim 9 wherein the substrate has a thickness ranging from about 2 to about 1000 μm.
12 . The method of claim 9 wherein the first and/or second support layer comprises a material selected from the group consisting of monocrystalline silicon, polycrystalline silicon, amorphous silicon, alumina, quartz, fused silica, boron nitride, silicon carbide, metals, ceramics, silicon nitride, aluminum nitride, gallium nitride, graphene, graphite, aluminum, titanium, copper, tungsten, diamond, aluminum oxide, conducting oxides, and combinations thereof.
13 . The method of claim 9 wherein the first and/or second support layer has a thickness ranging from about 100 to about 5000000 nm.
14 . The method of claim 9 , wherein the second support layer consists of silicon nitride.
15 . The method of claim 9 , wherein the thinning is done by etching the second support layer.