Structure of integrated inductor
This invention discloses a structure of an integrated inductor, comprising: an outer metal segment which comprises a first metal sub-segment and a second metal sub-segment; an inner metal segment which is arranged inside an area surrounded by the outer metal segment and comprises a third metal sub-segment and a fourth metal sub-segment; and at least a connecting structure for connecting the outer metal segment and the inner metal segment. The first metal sub-segment corresponds to the third metal sub-segment, and the first metal sub-segment and the third metal sub-segment belong to different metal layers in a semiconductor structure. The second metal sub-segment corresponds to the fourth metal sub-segment, and the second metal sub-segment and the fourth metal sub-segment belong to different metal layers in a semiconductor structure.
1. An integrated inductor structure, comprising:
an outer metal segment;
an inner metal segment in an area surrounded by the outer metal segment;
at least a bridging metal segment for connecting the outer metal segment and the inner metal segment; and
at least a connecting structure for connecting the bridging metal segment and the outer metal segment or the inner metal segment;
wherein, the outer metal segment and the inner metal segment are on different metal layers of a semiconductor structure;
wherein the outer metal segment comprises:
a first metal segment connecting a first bridging metal segment through a first connecting structure; and
a second metal segment connecting a second bridging metal segment;
wherein, the first bridging metal segment connects the inner metal segment and the second bridging metal segment connects the inner metal segment through a second connecting structure.
2. The integrated inductor structure of claim 1 , wherein a thickness of a metal layer of the outer metal segment is smaller than a thickness of a metal layer of the inner metal segment.
3. The integrated inductor structure of claim 1 , wherein the outer metal segment and the inner metal segment belong to different dies and the connecting structure is a micro bump.
4. The integrated inductor structure of claim 1 , wherein the outer metal segment is in a first oxide layer, the inner metal segment is in a second oxide layer, a silicon layer is disposed between the first oxide layer and the second oxide layer, and the connecting structure is a through-silicon via.
5. The integrated inductor structure of claim 4 , wherein the first oxide layer, the silicon layer and the second oxide layer form a die and the first oxide layer and the second oxide layer are the front side and the back side of the die, respectively.
6. The integrated inductor structure of claim 1 being a symmetric spiral inductor structure.
7. An integrated inductor structure, comprising:
an outer metal segment;
an inner metal segment in an area surrounded by the outer metal segment;
at least a bridging metal segment for connecting the outer metal segment and the inner metal segment; and
at least a connecting structure for connecting the bridging metal segment and the outer metal segment or the inner metal segment;
wherein, the outer metal segment and the inner metal segment are on different metal layers of a semiconductor structure;
wherein, the outer metal segment is in a first oxide layer, the inner metal segment is in a second oxide layer, a silicon layer is disposed between the first oxide layer and the second oxide layer, and the connecting structure is a through-silicon via;
wherein, the first oxide layer, the silicon layer and the second oxide layer form a die and the first oxide layer and the second oxide layer are the front side and the back side of the die, respectively.
8. The integrated inductor structure of claim 7 , wherein a thickness of a metal layer of the outer metal segment is smaller than a thickness of a metal layer of the inner metal segment.
9. The integrated inductor structure of claim 7 , wherein the outer metal segment and the inner metal segment belong to different dies and the connecting structure is a micro bump.
10. The integrated inductor structure of claim 7 being a symmetric spiral inductor structure.