Solvent-based oxidation on germanium and III-V compound semiconductor materials

1. A method to form a semiconductor structure, comprising:

forming a fin structure over a semiconductor substrate, the fin structure having a top surface facing away from the semiconductor substrate;

forming an oxide layer over the fin structure, wherein forming the oxide layer includes performing a wet chemical oxidation process on the fin structure with a solvent mixture;

removing a portion of the oxide layer to expose the top surface of the fin structure;

forming a dielectric layer over the oxide layer and directly on the exposed top surface of the fin structure; and

forming at least one isolation feature over the semiconductor structure, wherein after forming the at least one isolation feature over the semiconductor structure, the at least one isolation feature has a bottom surface facing the semiconductor substrate and the dielectric layer is not disposed under the bottom surface of the at least one isolation feature; and

forming a first dielectric material layer over the oxide layer, wherein the oxide layer has a first sidewall surface directly interfacing with the fin structure and a second sidewall surface opposite the first sidewall surface, the second sidewall surface directly interfacing with the first dielectric material layer.

2. The method of claim 1 , wherein the solvent mixture includes a water soluble substance and an aprotic solvent.

3. The method of claim 2 , wherein aprotic solvent comprises one or more of propylene carbonate, dimethyl sulfoxide, ethylene carbonate or diethyl carbonate.

4. The method of claim 2 , wherein water soluble substance comprises one or more of H 2 O 2 , O 3 , NH 4 OH, HCl, HF, or H 2 SO 4 .

5. The method of claim 1 , further comprising forming a second dielectric material layer over the first dielectric material layer.

6. The method of claim 5 , wherein the first dielectric material layer is formed of a different material than the second dielectric material layer.

7. The method of claim 1 , further comprising forming a gate electrode over the dielectric layer, wherein the dielectric layer includes a high k dielectric material.

8. The method of claim 1 , wherein removing the portion of the oxide layer to expose the top surface of the fin structure includes removing another portion of the oxide layer to expose a sidewall surface of the fin structure.

9. A method, comprising:

providing a substrate including a first semiconductor material;

forming a semiconductor layer and a fin structure of a second semiconductor material over the substrate,

forming an oxidized layer that is an oxide of the second semiconductor material over the semiconductor layer and the fin structure, wherein the forming the oxidized layer includes:

mixing a water soluble substance with an aprotic solvent to form a solvent mixture; and

performing a wet chemical oxidation operation on a top surface of the semiconductor layer and on the fin structure with the solvent mixture to form the oxidized layer;

depositing a first dielectric layer over the oxidized layer, wherein the oxidized layer has a first sidewall surface directly interfacing with the fin structure and a second sidewall surface opposite the first sidewall surface, the second sidewall surface directly interfacing with the first dielectric layer;

forming an isolation feature over the first dielectric layer and exposing an upper portion of the fin structure;

forming a high-k dielectric layer over the upper portion of the fin structure; and

forming a gate electrode over the high-k dielectric layer.

10. The method of claim 9 , wherein the second semiconductor material is selected from the group consisting of Ge, SiGe, group III, and group IV compound semiconductor material.

11. The method of claim 9 , wherein the aprotic solvent comprises one or more of propylene carbonate, dimethyl sulfoxide, ethylene carbonate or diethyl carbonate.

12. The method of claim 9 , wherein the water soluble substance comprises one or more of H 2 O 2 , O 3 , NH 4 OH, HCl, HF, or H 2 SO 4 .