Semiconductor package and method of forming the same
According to an exemplary embodiment, a semiconductor package is provided. The semiconductor package includes: a chip having a plurality of joint pads; a component having a plurality of metal caps on one side and having a grinded surface on the other side, wherein the metal caps are in contact with the joint pads of the chip.
1. A semiconductor package, comprising:
a chip having a plurality of joint pads;
a pillar formed on the chip, the pillar having a thickness that is greater than that of the joint pads;
a component having a plurality of metal caps in physical contact with the joint pads of the chip; and
a redistribution layer formed in an insulator layer and including a conductive material that is electrically connected to the chip through the pillar, wherein a distance between the insulator layer and the chip is equal to the thickness of the pillar.
2. The semiconductor package of claim 1 , wherein the component comprises an integrated passive device.
3. The semiconductor package of claim 1 , wherein the component has a thickness of about 30 micrometers to 80 micrometers.
4. The semiconductor package of claim 1 , wherein the component has the metal caps on one side and a grinded surface on the other side.
5. A semiconductor package, comprising:
a chip having a plurality of joint pads;
a pillar formed on the chip, the pillar having a thickness that is greater than that of the joint pads;
a component having a plurality of metal caps on one side and having a grinded surface on the other side, wherein the metal caps are in physical contact with the joint pads of the chip; and
a redistribution layer formed in an insulator layer, the redistribution layer being electrically connected to the chip through the pillar, wherein a distance between the insulator layer and the chip is equal to the thickness of the pillar.
6. The semiconductor package of claim 5 , wherein the component comprises an integrated passive device.
7. The semiconductor package of claim 5 , further comprising an underfill that surrounds the joint pads and the metal caps of the component.
8. The semiconductor package of claim 5 , wherein the component has a thickness of about 30 micrometers to 80 micrometers.
9. The semiconductor package of claim 5 , wherein the component electrically connects to the chip through the metal caps and the joint pads.
10. A semiconductor package, comprising:
a chip having a plurality of joint pads;
a pillar formed on the chip, the pillar having a thickness that is greater than that of the joint pads;
a component having a plurality of metal caps in physical contact with the joint pads of the chip;
a redistribution layer formed in an insulator layer and including a conductive material that is electrically connected to the chip through the pillar, wherein a distance between the insulator and the chip is equal to the thickness of the pillar; and
an underfill surrounding the joint pads and the metal caps of the component.
11. The semiconductor package of claim 10 , wherein the component comprises an integrated passive device.
12. The semiconductor package of claim 10 , wherein the component has a thickness of about 30 micrometers to 80 micrometers.
13. The semiconductor package of claim 10 , wherein the component has the metal caps on one side and a grinded surface on the other side.
14. The semiconductor package of claim 10 , wherein the thickness of the joint pads is about 1 micrometer to 8 micrometers.
15. The semiconductor package of claim 10 , wherein the width of the joint pads is about 20 micrometers to 400 micrometers.
16. The semiconductor package of claim 10 , wherein the thickness of the pillar is about 70 micrometers to 200 micrometers.
17. The semiconductor package of claim 10 , wherein the width of the pillar is about 50 micrometers to 300 micrometers.
18. The semiconductor package of claim 10 , the metal caps are made of at least one of solder, nickel, gold, and copper.
19. The semiconductor package of claim 10 , the thickness of the metal caps is about 10 micrometers to 20 micrometers.