Photoresist layer and method
A system and method for middle layers is provided. In an embodiment the middle layer comprises a floating component in order to form a floating region along a top surface of the middle layer after the middle layer has dispersed. The floating component may be a polymer with a floating group incorporated into the polymer. The floating group may comprise a fluorine atom.
1. A method of manufacturing a semiconductor device, the method comprising:
applying a middle layer to a first layer over a substrate, wherein the middle layer has a first thickness after the applying the middle layer;
forming a floating region within the middle layer and along a top surface of the middle layer, wherein the floating region has a second thickness that that is greater than 5% of the first thickness; and
cross-linking polymers within the floating region.
2. The method of claim 1 , wherein the cross-linking polymers is formed at least in part using an annealing process.
3. The method of claim 1 , wherein the floating region has a higher concentration of a middle layer floating polymer than a remainder of the middle layer.
4. The method of claim 3 , wherein the middle layer floating polymer further comprises a chromophore unit.
5. The method of claim 4 , wherein the middle layer floating polymer further comprises a floating group.
6. The method of claim 5 , wherein the floating group comprises a substituted fluorine atom.
7. The method of claim 5 , wherein the floating group comprises a alkyl fluoride group.
8. A method of manufacturing a semiconductor device, the method comprising:
applying a middle layer material onto an anti-reflective coating over a substrate, the middle layer material comprising at least one polymer at a first concentration, the at least one polymer further comprising:
a chromophore group; and
a floating group; and
forming a floating region within the middle layer material, wherein the floating region comprises a second concentration of the at least one polymer higher than the first concentration.
9. The method of claim 8 , further comprising annealing the floating region.
10. The method of claim 8 , wherein the floating group comprises a substituted fluorine atom.
11. The method of claim 8 , wherein the floating group comprises an alkyl group with a substituted fluorine.
12. The method of claim 8 , further comprising applying a photoresist over the middle layer after the forming the floating region.
13. The method of claim 12 , further comprising patterning the middle layer with the photoresist as a mask.
14. The method of claim 8 , further comprising semiconductor fins located within the bottom-anti-reflective coating.
15. A method of manufacturing a semiconductor device, the method comprising:
applying a bottom anti-reflective layer over a substrate;
applying a middle layer over the bottom anti-reflective layer; and
modifying a reflectivity of the middle layer by forming a high-concentration region of a first polymer along a surface of the middle layer facing away from the substrate.
16. The method of claim 15 , wherein the first polymer comprises a substituted fluorine atom.
17. The method of claim 15 , wherein the first polymer comprises an alkyl group with a substituted fluorine atom.
18. The method of claim 15 , further comprising applying a photoresist in physical contact with the middle layer.
19. The method of claim 18 , further comprising:
patterning the photoresist to form a patterned photoresist; and
etching the middle layer using the patterned photoresist as a mask.
20. The method of claim 15 , further comprising annealing the middle layer to cross-link the first polymer to a second polymer.