Self-formation of high-density arrays of nanostructures

1. A semiconductor device, comprising:

a flexible substrate;

a crystalline semiconductor layer bonded to the flexible substrate, the crystalline semiconductor layer being cracked to form parallel structures along at least one direction; and

a two-dimensional material formed on the crystalline semiconductor layer being separated at cracks in the crystalline semiconductor layer to form nanostructures.

2. The device as recited in claim 1 , wherein the cracks are spaced by an intercrack distance which is proportional to an applied strain during crack propagation.

3. The device as recited in claim 1 , wherein the two-dimensional material includes graphene.

4. The device as recited in claim 1 , wherein the crystalline semiconductor layer includes SiC.

5. The device as recited in claim 1 , further comprising second cracks formed transversely to the cracks along the at least one direction.

6. The device as recited in claim 5 , wherein the second cracks are formed through the crystalline semiconductor layer and through the two-dimensional material.

7. The device as recited in claim 6 , wherein the second cracks in combination with first cracks provide dot structures including the two-dimensional material on the crystalline semiconductor layer.

8. The device as recited in claim 1 , further comprising: an electronic or photonic device formed by incorporating the parallel structures.