Electronics device having two-dimensional (2D) material layer and method of manufacturing the electronic device by inkjet printing
An electronic device includes first and second electrodes that are spaced apart from each other and a 2D material layer. The 2D material layer connects the first and second electrodes. The 2D material layer includes a plurality of 2D nanomaterials. At least some of the 2D nanomaterials overlap one another.
1. An electronic device comprising:
a first electrode;
a second electrode spaced apart from the first electrode; and
a two-dimensional (2D) material layer connected to the first and second electrodes, the 2D material layer including a plurality of 2D nanomaterials, having semiconductor characteristics, at least some of the 2D nanomaterials partially overlapping one another,
wherein the plurality of 2D nanomaterials are planar in shape, and each of the plurality of 2D nanomaterials include at least one of phosphorene, germanane, and silicene.
2. The electronic device of claim 1 , wherein the 2D material layer further includes a conductive material.
3. The electronic device of claim 2 , wherein the conductive material includes at least one of graphene, conductive particles, conductive nanotubes, and conductive nanowires.
4. The electronic device of claim 1 , wherein the 2D material layer further includes a dopant.
5. The electronic device of claim 1 , wherein the 2D material layer is a channel layer of the electronic device.
6. The electronic device of claim 5 , further comprising:
a gate insulating layer on the 2D material layer; and
a gate electrode on the gate insulating layer.
7. The electronic device of claim 1 , wherein a Schottky junction is formed between the 2D material layer and at least one of the first and second electrodes.
8. The electronic device of claim 1 , wherein a p-n junction is formed between the plurality of 2D nanomaterials.
9. The electronic device of claim 1 , wherein each of the plurality of 2D nanomaterials include at least one layer.
10. The electronic device of claim 4 , wherein the dopant includes one of alkali metal, AuCl 3 , a polymer, HPtCl 4 , AuCl 3 , HAuCl 4 , silver trifluoromethanesulfonate, AgNO 3 , H 2 PdCl 6 , palladium acetate (Pd(OAc) 2 ), and Cu(CN) 2 .
11. An electronic device comprising:
a first electrode;
a second electrode spaced apart from the first electrode; and
a two-dimensional (2D) material layer connected to the first and second electrodes, the 2D material layer including a plurality of 2D nanomaterials, having semiconductor characteristics, at least some of the 2D nanomaterials partially overlapping one another, wherein
the plurality of 2D nanomaterials are planar in shape, and each of the plurality of 2D nanomaterials include at least one of a transition metal dichalcogenide (TMD), phosphorene, germanane, and silicene,
the 2D material layer further includes a dopant,
the dopant includes one of alkali metal, AuCl 3 , a polymer, HPtCl 4 , AuCl 3 , HAuCl 4 , silver trifluoromethanesulfonate, AgNO 3 , H 2 PdCl 6 , palladium acetate (Pd(OAc) 2 ), and Cu(CN) 2 ,
the alkali metal includes one of K and Li, and
the polymer is polyethylenimine.
12. The electronic device of claim 1 , wherein several of the plurality of 2D nanomaterials extend non-parallel relative to each other.
13. The electronic device of claim 1 , wherein the 2D material layer is a dried ink.
14. The electronic device of claim 1 , wherein the at least some of the plurality of 2D nanomaterials partially overlapping one another include two 2D materials that extend non-parallel to each other and contain a same material.
15. The electronic device of claim 1 , wherein
the plurality of 2D nanomaterials include sidewalls,
and the sidewalls of two of the plurality of 2D nanomaterials contact each other.