Method and structures for via substrate repair and assembly

1. A method of fabricating a component, comprising:

forming a first layer structure being electrically conductive and extending within an opening in a substrate, the opening extending from a first surface of the substrate towards a second surface opposite from the first surface, the opening having an inner wall extending away from the first surface and a bottom remote from the first surface, a dielectric material being exposed at the inner wall, the first layer structure extending at least partially along the inner wall, the first layer structure contacting the dielectric material exposed at the inner wall, the first layer structure having a lower edge located between the first and second surfaces of the substrate;

exposing the opening at the second surface of the substrate by processing applied to the substrate from above the second surface;

forming a second layer structure in contact with the lower edge of the first layer structure and in contact with a portion of the dielectric material exposed at the inner wall, the second layer structure being electrically conductive and extending at least partially along the inner wall; and

forming a principal conductor at least partially overlying the first layer structure and the second layer structure, the principal conductor being exposed at the first and second surfaces of the substrate.

2. The method as claimed in claim 1 , wherein the principal conductor is formed conforming to a contour of the first and second layer structures within the opening, the principal conductor defining an aperture extending therethrough between the first and second surfaces of the substrate.

3. The method as claimed in claim 2 , further comprising forming a barrier layer overlying an exposed surface of the aperture.

4. The method as claimed in claim 1 , further comprising, before the step of forming the first layer structure, forming the opening extending from the first surface of the substrate towards the second surface.

5. The method as claimed in claim 1 , wherein the substrate consists essentially of the dielectric material.

6. The method as claimed in claim 1 , wherein the substrate consists essentially of a semiconductor material, and wherein the dielectric material is a dielectric layer that overlies the semiconductor material within the opening, the dielectric layer defining the inner wall of the opening.

7. A method of fabricating a component, comprising:

forming a first layer structure extending within an opening in a substrate, the opening extending from a first surface of the substrate towards a second surface opposite from the first surface, the opening having an inner wall extending away from the first surface and a bottom remote from the first surface, the first layer structure extending at least partially along the inner wall;

exposing the opening at the second surface of the substrate by processing applied to the substrate from above the second surface;

forming a second layer structure in contact with the first layer structure, the second layer structure extending at least partially along the inner wall;

forming a principal conductor at least partially overlying the first layer structure and the second layer structure, the principal conductor being exposed at the first and second surfaces of the substrate, the principal conductor being formed conforming to a contour of the first and second layer structures within the opening, the principal conductor defining an aperture extending therethrough between the first and second surfaces of the substrate;

forming a barrier layer overlying an exposed surface of the aperture; and

forming a dielectric region within the aperture overlying the barrier layer.