Showerhead having a detachable high resistivity gas distribution plate

1. A showerhead for use in a semiconductor processing chamber, comprising:

a body having a first side and a second side opposing the first side;

a gas distribution plate disposed proximate the second side of the body, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm;

a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body;

a thermal gasket disposed in a gap between the body and gas distribution plate; and

one or more pins pressed into the second side of the body and disposed in the gap to maintain a thickness of the gap when the gas distribution plate deflects toward the body, wherein each of the one or more pins includes a through-hole to allow a volume behind each pin to be evacuated.

2. The showerhead of claim 1 , wherein the thermal gasket comprises a plurality of concentric rings disposed between the body and the gas distribution plate.

3. The showerhead of claim 1 , further comprising:

an yttrium fluoride coating on the second side of the body.

4. The showerhead of claim 1 , wherein the body comprises a plurality of through holes extending from the first side to the second side of the body.

5. The showerhead of claim 4 , wherein the body comprises a plenum formed in the first side of the body, the plenum fluidly coupled to the plurality of through holes.

6. The showerhead of claim 1 , wherein the gas distribution plate is fabricated from single crystalline silicon (Si).

7. The showerhead of claim 6 , wherein the gas distribution plate is fabricated from single crystalline silicon (Si) that is doped or coated with a high resistivity material.

8. The showerhead of claim 6 , wherein the gas distribution plate is fabricated from single crystalline silicon (Si) that is doped or coated with boron.

9. A process chamber, comprising:

a chamber body having a substrate support disposed within an inner volume of the chamber body; and

a showerhead disposed within the inner volume of the chamber body opposite the substrate support, the showerhead comprising:

a body having a first side and a second side opposing the first side, wherein the first side of the body is coupled to a component of the process chamber;

a gas distribution plate disposed proximate the second side of the body, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm;

a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body;

a thermal gasket disposed in a gap between the body and gas distribution plate; and

a plurality of pins pressed into the second side of the body and disposed in the gap to maintain a thickness of the gap when the gas distribution plate deflects toward the body, wherein each of the plurality of pins includes a through-hole to allow a volume behind each pin to be evacuated.

10. The process chamber of claim 9 , wherein the component of the process chamber is a chiller plate, and wherein the chiller plate is coupled to a ceiling of the chamber body.

11. The process chamber of claim 9 , wherein the thermal gasket comprises a plurality of concentric rings disposed between the body and the gas distribution plate.

12. The process chamber of claim 9 , further comprising a radio frequency (RF) power source that operates at a power greater than or equal to 2000 Watts and a frequency of 162 MHz.

13. The process chamber of claim 9 , wherein the gas distribution plate is fabricated from single crystalline silicon (Si).

14. The process chamber of claim 9 , wherein the gas distribution plate is fabricated from single crystalline silicon (Si) that is doped or coated with a high resistivity material.

15. The process chamber of claim 9 , wherein the gas distribution plate is fabricated from single crystalline silicon (Si) that is doped or coated with boron.

16. A showerhead for use in a semiconductor processing chamber, comprising:

a body having a first side and a second side opposing the first side, the second side including an yttrium fluoride coating;

a gas distribution plate disposed proximate the second side of the body, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm;

an anodized clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body;

a plurality of silicone thermal gaskets disposed in a gap between the body and gas distribution plate; and

a plurality of pins pressed into the second side of the body and disposed in the gap to maintain a thickness of the gap when the gas distribution plate deflects toward the body, wherein each of the plurality of pins includes a through-hole to allow a volume behind each pin to be evacuated.