BONDED EPITAXIAL OXIDE STRUCTURES FOR COMPOUND SEMICONDUCTOR ON SILICON SUBSTRATES

1 . A structure comprising:

a handle substrate;

an epitaxial oxide layer, the epitaxial oxide layer being bonded directly or indirectly to the handle substrate, and

a compound semiconductor layer adjoining and lattice matched to the epitaxial oxide layer.

2 . The structure of claim 1 , wherein the compound semiconductor layer is a group III-V compound layer or a group II-VI compound layer.

3 . The structure of claim 2 , wherein the handle substrate is a bulk silicon substrate having a silicon oxide layer, the silicon oxide layer adjoining the epitaxial oxide layer.

4 . A structure comprising:

a germanium base;

one or more compound semiconductor layers adjoining the germanium base, the one or more compound semiconductor layers including a top layer of a desired compound semiconductor material, and

an epitaxial oxide layer adjoining and lattice matched to the top layer.

5 . The structure of claim 4 , further including an implanted cleavage plane layer within the top layer.

6 . The structure of claim 5 , further including a silicon substrate, the germanium base comprising a germanium layer on the silicon substrate.

7 . The structure of claim 6 , wherein the top layer is a zinc selenide layer adjoining the germanium layer, the epitaxial oxide layer adjoining the zinc selenide layer.

8 . The structure of claim 5 , further including a handle wafer bonded to the epitaxial oxide layer.

9 . The structure of claim 5 , wherein the one or more compound semiconductor layers comprises a lattice engineered stack of compound semiconductor materials, the lattice engineered stack including a graded layer adjoining the top layer.

10 . The structure of claim 9 , wherein the one or more compound semiconductor layers are comprised of one or more group III-V materials.