Ultraviolet disinfection system
Embodiments of the invention include an elongate chamber. A UV source includes a semiconductor device, the semiconductor device including an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The semiconductor device is positioned on a wall of the elongate chamber. An inner surface of the elongate chamber is reflective.
1. A structure comprising:
an elongate chamber; and
a ultraviolet (UV) source comprising a semiconductor device comprising an active layer disposed between an n-type region and a p-type region, wherein the active layer emits radiation having a peak wavelength in a UV range; wherein
the semiconductor device is positioned on a wall of the elongate chamber;
the semiconductor device is positioned in a water tight compartment formed by a sealing material disposed adjacent the semiconductor device, such that a growth substrate of the semiconductor device is in contact with a fluid disposed in the elongate chamber; and
an inner surface of the elongate chamber causes reflection.
2. The structure of claim 1 wherein the inner surface of the elongate chamber causes attenuated total reflection.
3. The structure of claim 1 wherein:
the elongate chamber is defined by a sidewall between first and second end walls;
the UV source is disposed on the first end wall; and
the second end wall is reflective of radiation emitted by the active layer.
4. The structure of claim 1 wherein the elongate chamber is one of plastic, metal, and glass, and an interior is coated with polytetrafluoroethylene.
5. The structure of claim 1 wherein the UV source comprises an optic optically coupled to the semiconductor device.
6. The structure of claim 5 wherein the optic comprises a one of a compound parabolic concentrator and a dome lens.
7. The structure of claim 5 wherein the optic comprises a surface that reflects a majority of light by total internal reflection.
8. The structure of claim 5 wherein the optic is optically coupled to only a top surface of the semiconductor device.
9. The structure of claim 5 wherein an outlet surface of the optic is a same shape as a cross section of the elongate chamber.
10. The structure of claim 1 wherein a surface of the elongate chamber on the wall on which the UV source is positioned is reflective of radiation emitted by the active layer.
11. The structure of claim 1 wherein an end wall is removable from a remaining portion of the elongate chamber.
12. The structure of claim 1 wherein the sidewall is at least 5 times longer than the end wall.
13. The structure of claim 1 further comprising an inlet to the elongate chamber located proximate a first end of the elongate chamber and an outlet to the elongate chamber located proximate a second end of the elongate chamber opposite the first end.
14. The structure of claim 1 wherein the elongate chamber is circular in cross section.
15. The structure of claim 1 wherein a surface of the elongate chamber comprises a photocatalytic material.