Determining whether a memory cell state is in a valley between adjacent data states
A determination can be made as to whether a state of a memory cell is in a valley between adjacent distributions of states associated with respective data states. A signal indicative of a data state of the memory cell and whether the state of the memory cell is in the valley can be transmitted.
1. A method, comprising:
sensing a memory cell to:
determine a data state of the memory cell; and
determine whether a state of the memory cell is in a valley with respect to a distribution of states associated with the data state and a distribution of states associated with an adjacent data state;
transmitting a first plurality of units of data corresponding to the data state in response to the state being in the valley, wherein the first plurality of units of data comprise a plurality of units of data corresponding directly to the data state and an extra unit indicating the state of the memory cell being in the valley; and
transmitting a second plurality of units of data corresponding to the data state in response to the state not being in the valley, wherein the second plurality of units of data comprise a plurality of units of data corresponding directly to the data state and an extra unit indicating the state of the memory cell not being in the valley.
2. The method of claim 1 , wherein sensing the memory cell comprises sensing the memory cell with a ramping sensing signal.
3. The method of claim 1 , wherein sensing the memory cell comprises sensing the memory cell with a plurality of discrete sensing signals.
4. The method of claim 1 , wherein the method includes generating a low confidence log-likelihood ratio for an error correction circuit in response to the transmission of the first plurality of units of data.
5. The method of claim 4 , wherein the method includes generating a high confidence log-likelihood ratio for an error correction circuit in response to the transmission of the second plurality of units of data.
6. The method of claim 1 , wherein the first plurality of units of data comprises at least two more units of data than the second plurality of units of data.
7. The method of claim 1 , wherein the first plurality of units of data and the second plurality of units of data indirectly correspond to the data state.
8. The method of claim 1 , wherein sensing comprises sensing with sensing circuitry; and
wherein transmitting the first plurality of data units and transmitting the second plurality of data units comprises transmitting with one of the sensing circuitry and entropy coding circuitry.
9. An apparatus, comprising:
an array of memory cells; and
circuitry coupled to the array, wherein the circuitry is configured to:
sense a memory cell of the array to:
determine a data state of the memory cell; and
determine whether a state of the memory cell is in a valley with respect to a distribution of states associated with the data state and a distribution of states associated with an adjacent data state;
transmit a first plurality of units of data corresponding to the data state in response to the state being in the valley, wherein the first plurality of units of data comprise a plurality of units of data corresponding directly to the data state and an extra unit indicating the state of the memory cell being in the valley; and
transmit a second plurality of units of data corresponding to the data state in response to the state not being in the valley, wherein the second plurality of units of data comprise a plurality of units of data corresponding directly to the data state and an extra unit indicating the state of the memory cell not being in the valley.
10. The apparatus of claim 9 , wherein the circuitry is configured to sense the memory cell with a ramping sensing signal.
11. The apparatus of claim 9 , wherein the circuitry is configured to sense the memory cell with a plurality of discrete sensing signals.
12. The apparatus of claim 9 , wherein the circuitry is configured to generate a low confidence log-likelihood ratio for error correction in response to the transmission of the first plurality of units of data.
13. The apparatus of claim 12 , wherein the circuitry is configured to generate a high confidence log-likelihood ratio for error correction in response to the transmission of the second plurality of units of data.
14. The apparatus of claim 13 , wherein the circuitry includes error correction circuitry; and
wherein the circuitry is configured to transmit the low confidence log-likelihood ratio or the high confidence log-likelihood ratio to the error correction circuitry.
15. The apparatus of claim 14 , wherein the error correction circuitry is configured to use a low density parity check decoding algorithm for error correction.
16. The apparatus of claim 14 , wherein the error correction circuitry is configured to use an indication that the state of the memory cell is in the valley as an input to a belief propagation algorithm.
17. The apparatus of claim 9 , wherein the first plurality of units of data comprises at least two more units of data than the second plurality of units of data.
18. The apparatus of claim 9 , wherein the first plurality of units of data and the second plurality of units of data indirectly correspond to the data state.
19. The apparatus of claim 9 , wherein the circuitry includes sensing circuitry configured to sense the memory cell;
wherein the circuitry includes entropy coding circuitry; and
wherein at least one of the sensing circuitry and the entropy coding circuitry is configured to transmit the first plurality of data units and to transmit the second plurality of data units.
20. The apparatus of claim 9 , wherein the apparatus is a memory controller.