Display device
To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.
1. A display device comprising:
a pixel portion comprising:
a transistor comprising a semiconductor layer comprising indium, gallium, and zinc;
a first inorganic insulating film over the transistor;
an organic insulating film over the first inorganic insulating film;
a first transparent conductive layer over the organic insulating film;
a second inorganic insulating film over the first transparent conductive layer; and
a second transparent conductive layer over the first transparent conductive layer with the second inorganic insulating film interposed therebetween,
wherein the second transparent conductive layer is electrically connected to one of a source electrode layer and a drain electrode layer of the transistor in an opening,
wherein the opening is formed in the organic insulating film and the first inorganic insulating film,
wherein an edge portion of the second inorganic insulating film overlaps with the organic insulating film, and
wherein the organic insulating film comprises a region which does not overlap with the second inorganic insulating film and the second transparent conductive layer.
2. The display device according to claim 1 , wherein the second inorganic insulating film and the semiconductor layer do not overlap with each other.
3. The display device according to claim 1 , wherein the second inorganic insulating film and a gate electrode layer of the transistor do not overlap with each other.
4. The display device according to claim 1 , wherein the first inorganic insulating film has a stacked-layer structure.
5. The display device according to claim 1 , wherein the first inorganic insulating film comprises one of aluminum, gallium, yttrium, and hafnium.
6. The display device according to claim 1 , wherein edge portions of the semiconductor layer are in contact with the source and drain electrode layers.
7. A display device comprising:
a pixel portion comprising:
a transistor comprising a semiconductor layer comprising indium, gallium, and zinc;
a first inorganic insulating film over the transistor;
an organic insulating film over the first inorganic insulating film;
a first transparent conductive layer over the organic insulating film;
a second inorganic insulating film over the first transparent conductive layer;
a second transparent conductive layer over the first transparent conductive layer with the second inorganic insulating film interposed therebetween; and
a liquid crystal layer over the second transparent conductive layer,
wherein the second transparent conductive layer is electrically connected to one of a source electrode layer and a drain electrode layer of the transistor in an opening,
wherein the opening is formed in the organic insulating film and the first inorganic insulating film,
wherein an edge portion of the second inorganic insulating film overlaps with the organic insulating film,
wherein the organic insulating film comprises a region which does not overlap with the second inorganic insulating film and the second transparent conductive layer, and
wherein a part of the first inorganic insulating film is in contact with a part of the second inorganic insulating film.
8. The display device according to claim 7 , wherein the second inorganic insulating film and the semiconductor layer do not overlap with each other.
9. The display device according to claim 7 , wherein the second inorganic insulating film and a gate electrode layer of the transistor do not overlap with each other.
10. The display device according to claim 7 , wherein the first inorganic insulating film has a stacked-layer structure.
11. The display device according to claim 7 , wherein the first inorganic insulating film comprises one of aluminum, gallium, yttrium, and hafnium.
12. The display device according to claim 7 , wherein edge portions of the semiconductor layer are in contact with the source and drain electrode layers.
13. The display device according to claim 7 , wherein a part of the liquid crystal layer is in contact with a part of the organic insulating film.
14. A display device comprising:
a pixel portion comprising:
a transistor comprising:
a gate electrode layer having a stacked-layer structure;
a nanocrystalline oxide semiconductor layer over the gate electrode layer, the nanocrystalline oxide semiconductor layer comprising indium, gallium, and zinc; and
a source electrode layer and a drain electrode layer over the nanocrystalline oxide semiconductor layer, the source electrode layer and the drain electrode layer each having a stacked-layer structure,
a first inorganic insulating film over the transistor, the first inorganic insulating film comprising silicon and oxygen;
an organic insulating film over the first inorganic insulating film;
a first transparent conductive layer over the organic insulating film, the first transparent conductive layer comprising indium tin oxide;
a second inorganic insulating film over the first transparent conductive layer, the second inorganic insulating film comprising silicon and nitrogen; and
a second transparent conductive layer over the first transparent conductive layer with the second inorganic insulating film interposed therebetween, the second transparent conductive layer comprising indium tin oxide,
wherein the second transparent conductive layer is electrically connected to one of the source electrode layer and the drain electrode layer in an opening,
wherein the opening is formed in the organic insulating film and the first inorganic insulating film,
wherein an edge portion of the second inorganic insulating film overlaps with the organic insulating film, and
wherein the organic insulating film comprises a region which does not overlap with the second inorganic insulating film and the second transparent conductive layer.
15. The display device according to claim 14 , wherein the second inorganic insulating film and the nanocrystalline oxide semiconductor layer do not overlap with each other.
16. The display device according to claim 14 , wherein the second inorganic insulating film and the gate electrode layer do not overlap with each other.
17. The display device according to claim 14 , wherein the first inorganic insulating film has a stacked-layer structure.
18. The display device according to claim 14 , wherein the first inorganic insulating film comprises one of aluminum, gallium, yttrium, and hafnium.
19. The display device according to claim 14 , wherein edge portions of the nanocrystalline oxide semiconductor layer are in contact with the source and drain electrode layers.