SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE, AND NONTRANSITORY COMPUTER READABLE MEDIUM STORING A PATTERN GENERATING PROGRAM
According to one embodiment, a semiconductor device includes a stacked body of N (N is an integer of 2 or more) layers stacked on a semiconductor substrate and openings different in depth surrounded by the stacked body and separated from each other.
1 . A semiconductor device, comprising:
a stacked body of N (N is an integer of 2 or more) layers stacked on a semiconductor substrate; and
openings different in depth surrounded by the stacked body and separated from each other.
2 . The semiconductor device of claim 1 , comprising a guide pattern configured to be provided on the stacked body to divide the openings.
3 . The semiconductor device of claim 2 , wherein the guide pattern is arranged at a flat portion of the stacked body.
4 . The semiconductor device of claim 1 , wherein the guide pattern is made of a material different from that for the stacked body.
5 . The semiconductor device of claim 1 , wherein
the stacked body includes N layers of word lines; and
the openings are N contact holes corresponding to the N layers of word lines.
6 . The semiconductor device of claim 5 , wherein contact holes in the lower-layer word lines penetrate through the upper-layer word lines.
7 . The semiconductor device of claim 6 , comprising:
N contact plugs embedded into the N contact holes; and
N extracted lines connected to the N layers of word lines via the N contact plugs.
8 . The semiconductor device of claim 7 , comprising a columnar body penetrating through the N layers of word lines, wherein
the columnar body includes:
a central body capable of forming a channel;
a tunnel insulating film formed on an outer peripheral surface of the central body;
a charge trap film formed on an outer peripheral surface of the tunnel insulating film; and
a block insulating film formed on an outer peripheral surface of the charge trap film.
9 . A manufacturing method for a semiconductor device, comprising:
forming a three-dimensional structure on a semiconductor substrate;
forming a guide pattern corresponding to openings in the three-dimensional structure on the three-dimensional structure;
forming resist films different in thickness divided by the guide pattern on the three-dimensional structure; and
etching the three-dimensional structure via the resist films such that the openings are different in depth.
10 . The manufacturing method for a semiconductor device of claim 9 , wherein
the forming resist films different in thickness divided by the guide pattern on the three-dimensional structure includes:
forming resist films equal in thickness and different in area in the guide pattern on the three-dimensional structure; and
reflowing the resist films to cause differences in the thickness of the resist films.
11 . The manufacturing method for a semiconductor device of claim 10 , wherein differences are made in crude density of a light-shielding pattern in an exposure mask for use in light exposure of the resist films to cause differences in areas of the resist films.
12 . The manufacturing method for a semiconductor device of claim 9 , wherein the three-dimensional structure is a stacked body in which word lines and insulating films are alternately stacked.
13 . The manufacturing method for a semiconductor device of claim 12 , wherein depths of the openings are set for each of the word lines in the layers.
14 . The manufacturing method for a semiconductor device of claim 13 , comprising:
forming side-wall insulating films on side walls of the openings; and
embedding into the openings contact plugs electrically connected to the word lines in the layers.
15 . A nontransitory computer readable medium storing a pattern generating program to cause a computer to perform:
extracting a stepped region in a three-dimensional structure;
calculating a guide region around the stepped region; and
arranging a guide pattern in the guide region.
16 . The nontransitory computer readable medium of claim 15 , wherein the guide region is set at a flat portion of the three-dimensional structure.
17 . The nontransitory computer readable medium of claim 15 , wherein the guide pattern is set to surround a lower portion of the stepped region.
18 . A nontransitory computer readable medium storing a pattern generating program to cause a computer to perform:
acquiring depth information of openings different in depth in a three-dimensional structure;
calculating a film thickness distribution of a resist necessary for obtaining the depth;
calculating volume of the resist necessary for obtaining the film thickness distribution in each of the openings; and
generating an extracted pattern of the resist necessary for obtaining the volume in each of the openings.
19 . The nontransitory computer readable medium of claim 18 , wherein the three-dimensional structure is a stacked body in which word lines and insulating films are alternately stacked.
20 . The nontransitory computer readable medium of claim 19 , wherein the depth information is depth information of contact holes for contact with the word lines.