Interconnection structure having a via structure and fabrication thereof

1. A method of forming an interconnection structure comprising:

providing a substrate having a first side and a second side opposite to the first side;

forming at least one electric device on the substrate, wherein the at least one electric device comprises a plurality of metal electrodes;

forming a via hole through one of the plurality of the metal electrodes of the electric device and the substrate, wherein the via hole has a first opening neighboring the first side and a second opening neighboring the second side;

forming a first pad covering the first opening and directly on the at least one electric device, wherein a portion of the at least one electric device is between the first pad and the substrate; and

forming a via structure in the via hole subsequent to forming the first pad, wherein the via structure comprises a conductive material and is adjoined to the first pad, and the via structure exceeds the second opening.

2. The method of forming an interconnection structure as claimed in claim 1 , further comprising:

forming a photosensitive layer on the substrate covering the at least one electric device prior to forming the via hole.

3. The method of forming an interconnection structure as claimed in claim 1 , further comprising forming an insulating layer surrounding a sidewall of the via hole prior to forming the via structure.

4. The method of forming an interconnection structure as claimed in claim 1 , wherein forming the first pad comprises performing a first metal screen printing process to form the first pad covering the first opening.

5. The method of forming an interconnection structure as claimed in claim 1 , further comprising forming a second pad covering the via hole subsequent to forming the via structure.

6. The method of forming an interconnection structure as claimed in claim 1 , wherein forming the via hole through the substrate comprises drilling the via hole through the substrate with a laser beam.

7. The method of forming an interconnection structure as claimed in claim 1 , wherein forming the via structure is performed by electric plating using the first pad as a seed layer.

8. The method for forming an interconnection structure as claimed in claim 1 , wherein the metal electrode of the electric device being through by the via hole is a drain electrode.

9. A method for forming an interconnection structure, comprising:

providing a substrate having a first side a second side opposite to the first side;

forming at least one electric device on the substrate, wherein the at least one electric device comprises a plurality of metal electrodes;

forming a via hole through one of the plurality of the metal electrodes of the electric device and the substrate, wherein the via hole has a first opening neighboring the first side and a second opening neighboring the second side; and

performing a screen printing process on the first side to fill a conductive material into the via hole so as to form a via structure in the via hole and a first pad disposed on the first side and directly on the at least one electric device, adjoined to the via structure, and the via structure exceeds the second opening, wherein a portion of the at least one electric device is between the first pad and the substrate.

10. The method for forming an interconnection structure as claimed in claim 9 , further comprising:

forming a photosensitive layer on the substrate covering the at least one electric device prior to forming the via hole.

11. The method for forming an interconnection structure as claimed in claim 9 , further comprising forming an insulating layer surrounding a sidewall of the via hole prior to forming the via structure.

12. The method for forming an interconnection structure as claimed in claim 9 , wherein the metal electrode of the electric device being through by the via hole is a drain electrode.