IP Library › Granted Patent US 9,584,125
Granted Patent B2
US 9,584,125 · App. 14/750,337 · Granted Feb 28, 2017

Interface circuit

Inventor: Masanobu Tsuji (Kyoto, JP)
Assignee: ROHM CO., LTD.
H03K19/018521H03K19/0005H03K19/017509
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,584,125
App. No.
14/750,337
Granted
Feb 28, 2017
Kind
B2
Abstract

An interface circuit receives an input signal IN having a first voltage amplitude from a first circuit, and outputs an output signal OUT having a second voltage amplitude to a second circuit. A level shifter comprises a first CMOS inverter and a second CMOS inverter which are cross-coupled, and a current limiting circuit that limits a current that flows through the first CMOS inverter and the second CMOS inverter, and converts the input signal IN into an intermediate signal INT which is a differential signal. A latch circuit receives the intermediate signal INT from the level shifter, and switches its state according to the positive signal and the negative signal of the intermediate signal INT.

Claims (38)

1. An interface circuit that receives a differential input signal having a first voltage amplitude from a first circuit, and that outputs an output signal having a second voltage amplitude to a second circuit, the interface circuit comprising:

a level shifter that comprises a first CMOS inverter and a second CMOS inverter which are cross-coupled, and a current limiting circuit that limits a current that flows through the first CMOS inverter and the second CMOS inverter, and that converts the input signal into an intermediate signal which is a differential signal; and

a latch circuit that receives the intermediate signal from the level shifter, and that switches a state thereof according to a positive signal and an negative signal of the intermediate signal, wherein the first CMOS inverter comprises:

a first NMOS transistor having its gate coupled to an output of the second CMOS inverter;

a second NMOS transistor having its source coupled to a drain of the first NMOS transistor, having its drain coupled to an output of the first CMOS inverter, and having its gate receiving a positive signal of the input signal;

a first PMOS transistor having its gate receiving the positive signal of the input signal; and

a fifth PMOS transistor having its source coupled to a drain of the first PMOS transistor, having its drain coupled to the output of the first CMOS inverter, and having its gate receiving a ground voltage,

and wherein the second CMOS inverter comprises:

a second NMOS transistor having its gate coupled to the output of the first CMOS inverter;

a fourth NMOS transistor having its source coupled to a drain of the second NMOS transistor, having its drain coupled to the output of the second CMOS inverter, and having its gate receiving a negative signal of the input signal;

a second PMOS transistor having its gate receiving the negative signal of the input signal; and

a sixth PMOS transistor having its source coupled to a drain of the second PMOS transistor, having its drain coupled to the output of the second CMOS inverter, and having its gate receiving a ground voltage.

2. The interface circuit according to claim 1 , wherein the latch circuit comprises a pair of cross-coupled NAND gates.

3. The interface circuit according to claim 1 , wherein the current limiting circuit comprises a current source connected to sources of the first NMOS transistor and the second NMOS transistor.

4. The interface circuit according to claim 1 , wherein the current limiting circuit comprises a current source connected to sources of the first PMOS transistor and the second PMOS transistor.

5. The interface circuit according to claim 1 , wherein the latch circuit comprises a pair of cross-coupled NAND gates or otherwise a pair of cross-coupled NOR gates.

6. The interface circuit according to claim 1 , monolithically integrated on a single semiconductor substrate.

7. A semiconductor integrated circuit comprising:

a first circuit that generates an input signal having a first voltage amplitude;

a second circuit provided with a power supply rail having a voltage difference that is greater than the first voltage amplitude; and

the interface circuit according to claim 1 , that receives a signal from the first circuit, and that outputs a signal to the second circuit.

8. The semiconductor integrated circuit according to claim 7 , wherein the first circuit comprises an oscillator that generates a clock signal,

and wherein the interface circuit receives the clock signal, and outputs a signal to the second circuit.

9. An interface circuit that receives a differential input signal having a first voltage amplitude from a first circuit, and that outputs an output signal having a second voltage amplitude to a second circuit, the interface circuit comprising:

a level shifter that comprises a first CMOS inverter and a second CMOS inverter which are cross-coupled, and a current limiting circuit that limits a current that flows through the first CMOS inverter and the second CMOS inverter, and that converts the input signal into an intermediate signal which is a differential signal; and

a latch circuit that receives the intermediate signal from the level shifter, and that switches a state thereof according to a positive signal and an negative signal of the intermediate signal, wherein the first CMOS inverter comprises:

a first NMOS transistor having its gate receiving a positive signal of the input signal;

a fifth NMOS transistor having its source coupled to a drain of the first NMOS transistor, having its drain coupled to an output of the first CMOS inverter, and having its gate receiving a power supply voltage;

a first PMOS transistor having its gate coupled to an output of the second CMOS inverter; and

a third PMOS transistor having its source coupled to a drain of the first PMOS transistor, having its drain coupled to the output of the first CMOS inverter, and having its gate receiving the positive signal of the input signal,

and wherein the second CMOS inverter comprises:

a second NMOS transistor having its gate receiving a negative signal of the input signal;

a sixth NMOS transistor having its source coupled to a drain of the second NMOS transistor, having its drain coupled to the output of the second CMOS inverter, and having its gate receiving the power supply voltage;

a second PMOS transistor having its gate coupled to the output of the first CMOS inverter; and

a fourth PMOS transistor having its source coupled to a drain of the second PMOS transistor, having its drain coupled to the output of the second CMOS inverter, and having its gate receiving the negative signal of the input signal.

10. The interface circuit according to claim 9 , wherein the latch circuit comprises a pair of cross-coupled NOR gates.

11. The interface circuit according to claim 9 , wherein the current limiting circuit comprises a current source connected to sources of the first PMOS transistor and the second PMOS transistor.

12. The interface circuit according to claim 9 , wherein the current limiting circuit comprises a current source connected to sources of the first NMOS transistor and the second NMOS transistor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 25, 2015
From: TSUJI, MASANOBU
To: ROHM CO., LTD.
Reel/Frame 035907/0161 →
Priority Claims (1)
JP 2014-130714 · Jun 25, 2014 · national
Continuity (1)
Related Publication 20150381180A1 · Dec 31, 2015