IP Library Granted Patent US 9,499,406
Granted Patent B1
US 9,499,406 · App. 14/752,048 · Granted Nov 22, 2016

Methods for the additive manufacturing of semiconductor and crystal materials

Inventors: Ashley C. Stowe (Knoxville, TN); Douglas Speight (Knoxville, TN)
Assignee: Consolidated Nuclear Security, LLC
C01B19/002B01J19/085B01J19/121B01J19/128C09K11/881H01B1/06B01J2219/0871B01J2219/1203
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Quick Facts
Patent No.
US 9,499,406
App. No.
14/752,048
Granted
Nov 22, 2016
Kind
B1
Abstract

A method for the additive manufacturing of inorganic crystalline materials, including: physically combining a plurality of starting materials that are used to form an inorganic crystalline compound to be used as one or more of a semiconductor, scintillator, laser crystal, and optical filter; heating or melting successive regions of the combined starting materials using a directed heat source having a predetermined energy characteristic, thereby facilitating the reaction of the combined starting materials; and allowing each region of the combined starting materials to cool in a controlled manner, such that the desired inorganic crystalline compound results. The method also includes, prior to heating or melting the successive regions of the combined starting materials using the directed heat source, heating the combined starting materials to facilitate initial reaction of the combined starting materials. The method further includes translating the combined starting materials and/or the directed heat source between successive locations. The method still further includes controlling the mechanical, electrical, photonic, and/or optical properties of the inorganic crystalline compound.

Claims (18)

1. A method for the additive manufacturing of inorganic crystalline materials, comprising:

physically combining a plurality of starting materials that are used to form an inorganic crystalline compound;

heating or melting successive regions of the combined starting materials using a directed heat source having a predetermined energy characteristic, thereby facilitating the reaction of the combined starting materials; and

allowing each region of the combined starting materials to cool in a controlled manner, such that the desired inorganic crystalline compound results.

2. The method of claim 1 , further comprising, prior to heating or melting the successive regions of the combined starting materials using the directed heat source, heating the combined starting materials in an oven or heater to facilitate initial reaction of the combined starting materials.

3. The method of claim 1 , further comprising translating the combined starting materials and/or the directed heat source between successive locations.

4. The method of claim 1 , further comprising controlling directed heat source energy exposure and/or cooling profile to control one or more of the mechanical, electrical, photonic, and optical properties of the inorganic crystalline compound.

5. The method of claim 1 , wherein the directed heat source comprises one of a laser, an electron beam, and an infrared radiation source.

6. The method of claim 1 , wherein the inorganic crystalline compound is configured for use as one of a semiconductor, scintillator, laser crystal, and an optical filter.

7. A method for the additive manufacturing of inorganic crystalline materials, comprising:

physically combining a plurality of starting materials that are used to form an inorganic crystalline compound;

heating the combined starting materials in an oven or heater to facilitate initial reaction of the combined starting materials;

heating or melting successive regions of the combined starting materials using a directed heat source having a predetermined energy characteristic, thereby facilitating the reaction of the combined starting materials; and

allowing each region of the combined starting materials to cool in a controlled manner, such that the desired inorganic crystalline compound results.

8. The method of claim 7 , further comprising translating the combined starting materials and/or the directed heat source between successive locations.

9. The method of claim 7 , further comprising controlling directed heat source energy exposure and/or cooling profile to control one or more of the mechanical, electrical, photonic, and optical properties of the inorganic crystalline compound.

10. The method of claim 7 , wherein the directed heat source comprises one of a laser, an electron beam, and an infrared radiation source.

11. The method of claim 7 , wherein the inorganic crystalline compound is configured for use as one of a semiconductor, scintillator, laser crystal, and an optical filter.

Assignments (2)
CONFIRMATORY LICENSE Recorded Mar 3, 2016
From: CONSOLIDATED NUCLEAR SECURITY, LLC
To: U.S. DEPARTMENT OF ENERGY
Reel/Frame 037878/0676 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 26, 2015
From: STOWE, ASHLEY C.; SPEIGHT, DOUGLAS
To: CONSOLIDATED NUCLEAR SECURITY, LLC
Reel/Frame 035916/0151 →