SYSTEM AND METHOD FOR THERMO-COMPRESSION BONDING OF HIGH BUMP COUNT SEMICONDUCTORS
A system and method are provided for enabling the production of semiconductors requiring very high precision thermo-compression bonding, the system comprising a thermo-compression bonding system having force and/or distance measuring sensors configured to sense thermal expansion of system components and a controller configured to counteract such expansion by exercising appropriate control over such system. This system and method may be used for both constant force profile applications as well as those requiring variable force during a bonding operation.
1 . A system for thermo-compression bonding of high-bump count semiconductors, the system comprising:
a die head comprising a planar surface;
a substrate head comprising a planar surface, wherein said planar surface of said substrate head is oriented to oppose said planar surface of said die head;
wherein said planar surfaces of said die head and said substrate head are substantially parallel and capable of motion relative to one another in at least the axis perpendicular to their respective planar surfaces, such that they may be brought into compressing contact with one another;
at least one force sensor configured to measure compressive forces between said substantially parallel planar surfaces of said die head and said substrate head during a bonding operation; and
a controller in communication with said force sensor configured to continuously control the relative position of said substantially parallel planar surfaces of said die head and said substrate head during a bonding operation to maintain a desired compressive force, whereby thermal expansion of said die and substrate heads is continuously compensated for during a thermo-compression bonding operation.
2 . The system for thermo-compression bonding of high-bump count semiconductors of claim 1 further comprising at least one distance measuring device in communication with said controller, wherein the at least one distance measuring device is used to measure the actual thermal expansion of said die and substrate heads perpendicularly to said parallel planar surfaces of said die and substrate heads, thereby supplementing said at least one force sensor and allowing for even finer compensation for thermal expansion of said die and substrate heads during a bonding operation.
3 . The system for thermo-compression bonding of high-bump count semiconductors of claim 2 wherein said distance measuring device is selected from the group consisting of optical sensors, ultrasonic sensors, wire draw encoders, magnetic positioning sensors, optical linear measurement sensors, linear encoders, rotary encoders, capacitive encoders, inductive encoders, eddy current encoders and optical image sensors.
4 . A system for thermo-compression bonding of high-bump count semiconductors, the system comprising:
a die head comprising a planar surface;
a substrate head comprising a planar surface, wherein said planar surface of said substrate head is oriented to oppose said planar surface of said die head;
wherein said planar surfaces of said die head and said substrate head are substantially parallel and capable of motion relative to one another in at least the axis perpendicular to their respective planar surfaces, such that they may be brought into compressing contact with one another;
at least one distance measuring device in communication with said controller configured to measure the thermal expansion of said die and substrate heads perpendicular to said parallel planar surfaces of said die and substrate heads during a bonding operation; and
a controller in communication with said distance measuring device configured to continuously control the relative position of said substantially parallel planar surfaces of said die head and said substrate head during a bonding operation to maintain a desired compressive force, whereby thermal expansion of said die and substrate heads is continuously compensated for during a thermo-compression bonding operation.
5 . The system for thermo-compression bonding of high-bump count semiconductors of claim 4 wherein said distance measuring device is selected from the group consisting of optical sensors, ultrasonic sensors, wire draw encoders, magnetic positioning sensors, optical linear measurement sensors, linear encoders, rotary encoders, capacitive encoders, inductive encoders, eddy current encoders and optical image sensors.
6 . A method for compensating for thermal expansion and contraction of die and substrate heads during a thermo-compression bonding operation comprising:
providing a thermo-compression bonding system comprising:
a die head comprising a planar surface;
a substrate head comprising a planar surface, wherein said planar surface of said substrate head is oriented to oppose said planar surface of said die head;
wherein said planar surfaces of said die head and said substrate head are substantially parallel and capable of motion relative to one another in at least the axis perpendicular to said planar surfaces, such that they may be brought into compressing contact with one another;
at least one force sensor configured to measure compressive forces between said substantially parallel planar surfaces of said die head and said substrate head during a bonding operation; and
a controller in communication with said force sensor and configured to continuously control the relative position of said substantially parallel planar surfaces of said die head and said substrate head during a bonding operation to maintain a desired compressive force, whereby thermal expansion of said die and substrate heads is continuously compensated for during a thermo-compression bonding operation;
placing a die to be bonded to a substrate on said planar surface of said die head, wherein a face of said die to be bonded to said substrate is positioned facing away from said planar surface of said die head;
placing said substrate to be bonded to said die on said planar surface of said substrate head, wherein a face of said substrate to be bonded to said die is positioned facing away from said planar surface of said substrate head;
moving said die head towards said substrate head until a desired compressive force is reached;
heating said die and substrate heads to a desired temperature;
substantially continuously monitoring said compressive force perpendicular to said parallel planar faces of said die and substrate heads;
adjusting the relative positions of said parallel planar faces of said die and substrate heads to maintain a substantially constant compressive force as said die and substrate heads expand and contract due to thermal stresses during a bonding operation;
cooling said die and substrate heads; and
removing the bonded die and substrate.
7 . The method of compensating for thermal expansion and contraction of die and substrate heads during a thermo-compression bonding operation of claim 6 wherein said thermo-compression bonding system further comprises a distance measuring device in communication with said controller, wherein the step of continuously monitoring further comprises continuously monitoring the amount of thermal expansion of the die and substrate heads perpendicular to their planar faces via the distance measuring device and wherein the step of adjusting the relative positions of said parallel planar faces of said die and substrate heads comprises adjusting the relative positions of said parallel planar faces of said die and substrate heads to control for thermal expansion of said parallel planar faces of said die and substrate heads by adjusting their relative position as said die and substrate heads expand and contract due to thermal stresses, as indicated by said force sensor and said distance measuring device.
8 . The method of compensating for thermal expansion and contraction of die and substrate heads during a thermo-compression bonding operation of claim 6 wherein said thermo-compression bonding system comprises a distance measuring device in communication with said controller, in place of said force sensor, wherein the step of continuously monitoring further comprises continuously monitoring the amount of thermal expansion of the die and substrate heads perpendicular to their planar faces via the distance measuring device and wherein the step of adjusting the relative positions of said parallel planar faces of said die and substrate heads comprises adjusting the relative positions of said parallel planar faces of said die and substrate heads to control for thermal expansion of said parallel planar faces of said die and substrate heads by adjusting their relative position as said die and substrate heads expand and contract due to thermal stresses, as indicated by said distance measuring device.
9 . The method of compensating for thermal expansion and contraction of die and substrate heads during a thermo-compression bonding operation of claim 6 wherein adjusting the relative positions of said parallel planar faces of said die and substrate heads maintains a predefined compressive force profile, as opposed to a substantially constant force, during bonding as said die and substrate heads expand and contract due to thermal stresses.