Integrated circuit package and method of forming the same
Aspects of the invention are directed towards an integrated circuit package and method of forming the same, and more particularly to a redistributed chip packaging for an integrated circuit. The integrated circuit package includes an integrated circuit having a protective material on at least a portion of the integrated circuit. A lead frame is coupled to the integrated circuit and a conductive layer is also coupled to the interconnect. A solder ball is coupled to the conductive layer and a passivation layer is on the conductive layer. Active and passive components are electrically coupled to the integrated circuit.
1. A method of forming an integrated circuit package comprising:
forming a lead frame comprising a first portion and a second portion, wherein the first portion and the second portion intersect at an angle ranging from 45 degrees to 135 degrees;
forming an adhesive material on the first portion of the lead frame;
attaching a carrier to the lead frame with the adhesive material;
attaching an integrated circuit to the adhesive material;
forming an interconnect on the integrated circuit;
forming a protective material on the integrated circuit;
removing the carrier and the adhesive material;
removing a portion of the protective material to expose the interconnect and the second portion of the lead frame; and
removing the first portion of the lead frame.
2. The method of claim 1 , wherein the angle is in the range from 85 degrees to 95 degrees.
3. The method of claim 1 , wherein forming the protective layer comprises heating an epoxy material to a temperature in the range from 120° C. to 150° C. to harden the epoxy material.
4. The method of claim 3 , wherein removing the carrier and the adhesive material comprises heating the epoxy material to a temperature from 175° C. to 260° C. to thermally release the adhesive material and carrier.
5. The method of claim 1 , wherein removing the portion of the protective material comprises grinding an upper surface thereof.
6. The method of claim 1 , further comprising:
forming a conductive material on the protective layer;
forming a passivation layer on the conductive material; and
forming a solder ball on the passivation layer, wherein the solder ball is electrically coupled to the conductive material.
7. A method of making an integrated circuit package comprising:
forming a lead frame comprising a first portion and a second portion, wherein the first portion and the second portion intersect at an angle ranging from 45 degrees to 135 degrees;
adhering a double-sided thermal tape to a bottom surface of the first portion of the lead frame;
attaching a carrier to the lead frame with the double-sided thermal tape;
attaching an integrated circuit to the double-sided thermal tape adjacent to the first portion of the lead frame;
forming at least one pillar interconnect on the integrated circuit;
forming a compressive compound over the integrated circuit and the first and second portions of the lead frame;
hardening the compressive compound by heating the compressive compound to a temperature in the range from 120° C. to 150° C.;
removing a portion of the compressive compound to expose the at least one pillar interconnect and the second portion of the lead frame; and
removing the first portion of the lead frame.
8. The method of claim 7 , wherein the removing the portion of compressive compound comprises grinding an upper surface thereof.
9. The method of claim 8 , further comprising:
forming a conductive material on the compressive compound;
forming a first passivation layer on an upper surface of the conductive material;
forming a second passivation layer on a lower surface of the compressive compound; and
forming a solder ball on the first passivation layer, wherein the solder ball is electrically coupled to the conductive material.
10. The method of claim 7 , wherein the compressive compound comprises an epoxy material.
11. The method of claim 7 , further comprising attaching a component to the lower surface of the compressive compound.
12. A method of forming an integrated circuit package comprising:
forming a lead frame comprising a first portion and a second portion transverse to the first portion;
forming an adhesive material on the first portion of the lead frame;
attaching a carrier to the lead frame with the adhesive material;
attaching an integrated circuit to the adhesive material;
forming an interconnect on the integrated circuit;
forming a protective material on the integrated circuit;
removing the carrier and the adhesive material;
removing a portion of the protective material to expose the interconnect and the second portion of the lead frame; and
removing the first portion of the lead frame.
13. The method of claim 12 , wherein forming the protective material comprises heating an epoxy material to a temperature in the range from 120° C. to 150° C. to harden the epoxy material.
14. The method of claim 13 , wherein removing the carrier and the adhesive material comprises heating the epoxy material to a temperature from 175° C. to 260° C. to thermally release the adhesive material and carrier.
15. The method of claim 12 , wherein removing the portion of the protective material comprises grinding an upper surface thereof.
16. The method of claim 12 further comprising:
forming a conductive material on the protective material;
forming a passivation layer on the conductive material; and
forming a solder ball on the passivation layer, wherein the solder ball is electrically coupled to the conductive material.