Reducing autodoping of III-V semiconductors by atomic layer epitaxy (ALE)

1. A method for forming a doped III-V semiconductor material on a substrate, the method comprising the steps of:

(a) forming a first monolayer on the substrate, wherein the first monolayer comprises at least one group III or at least one group V element; and

(b) forming a doped second monolayer on a side of the first monolayer opposite the substrate, wherein the second monolayer comprises either i) at least one group V element if the first monolayer comprises at least one group III element, or ii) at least one group III element if the first monolayer comprises at least one group V element, wherein a dopant is selectively introduced only during formation of the second monolayer, wherein steps (a) and (b) are performed using atomic layer epitaxy, and wherein the step (a) comprises the steps of:

contacting the substrate with at least one group III or at least one group V element vapor phase epitaxy source under conditions sufficient to form the first monolayer on the substrate;

and purging any remaining reactants, wherein the purging is performed using an inert gas flow, and wherein the inert gas flow comprises a hydrogen gas flow.

2. The method of claim 1 , wherein the substrate comprises an indium phosphide substrate.

3. The method of claim 1 , wherein the conditions comprise a temperature of from about 350° C. to about 500° C., and ranges therebetween, and a duration of from about 1 second to about 20 seconds, and ranges therebetween.

4. The method of claim 1 , wherein the III-V semiconductor material comprises indium gallium arsenide (InGaAs) and, in the step (a), the substrate is contacted with at least one group V element vapor phase epitaxy source.

5. The method of claim 4 , wherein the at least one group V element vapor phase epitaxy source comprises tertiary butyl arsine.

6. The method of claim 1 , wherein the step (b) comprises the steps of:

contacting the substrate with at least one group III or at least one group V element vapor phase epitaxy source and a source of the dopant under conditions sufficient to form the second monolayer on the substrate; and

purging any remaining reactants.

7. The method of claim 6 , wherein the conditions sufficient to form the second monolayer on the substrate comprise a temperature of from about 350° C. to about 500° C., and ranges therebetween, and a duration of from about 1 second to about 20 seconds, and ranges therebetween.

8. The method of claim 6 , wherein the III-V semiconductor material comprises InGaAs and, in the step (b), the substrate is contacted with at least one group III element vapor phase epitaxy source.

9. The method of claim 8 , wherein the at least one group III element vapor phase epitaxy source comprises either trimethylindium or trimethylgallium.

10. The method of claim 8 , wherein the at least one group III element vapor phase epitaxy source comprises a combination of trimethylindium and trimethylgallium.

11. The method of claim 6 , wherein the dopant comprises a group IV dopant.

12. The method of claim 11 , wherein the group IV dopant comprises either i) an n-type dopant comprising silicon, tin, or germanium, or ii) a p-type dopant comprising carbon.

13. The method of claim 12 , wherein the source of the dopant comprises trimethylsilane.

14. The method of claim 1 , further comprising the step of:

repeating steps (a) and (b) to form one or more additional monolayers.