Silicon carbide single crystal wafer and method of manufacturing a silicon carbide single crystal ingot
View Patent ↗Provided is a SiC single crystal wafer, which is manufactured from a SiC single crystal ingot grown by the sublimation-recrystallization method, and which brings about high device performance and high device manufacture yield when used as a wafer for manufacturing a device. The SiC single crystal wafer has, in a surface thereof, a basal plane dislocation density of 1,000 dislocations per cm 2 or less, a threading screw dislocation density of 500 dislocations per cm 2 or less, and a Raman index of 0.2 or less. Further provided is a method of manufacturing a SiC single crystal ingot, including controlling heat input from a side surface of the single crystal ingot during growth of a single crystal, to thereby grow the crystal while changes in the temperature distribution of the single crystal ingot are reduced.
1. A silicon carbide single crystal wafer, which has a diameter of 100 mm or more, the silicon carbide single crystal wafer having, in a surface thereof, a basal plane dislocation (BPD) density of 500 dislocations per cm 2 or less, a threading screw dislocation (TSD) density of 200 dislocations per cm 2 or less, and a differential between a wavenumber of Raman scattered light measured at the center of the wafer and a wavenumber of Raman scattered light measured at a point located at 2 mm from a circumference of the wafer of 0.15 or less.
2. The silicon carbide single crystal wafer according to claim 1 , wherein the differential between a wavenumber of Raman scattered light measured at the center of the wafer and the wavenumber of Raman scattered light measured at the point located at 2 mm from the circumference of the wafer is 0.1 or less.
3. The silicon carbide single crystal wafer according to claim 1 , wherein the basal plane dislocation density in the surface is 300 dislocations per cm 2 or less.
4. The silicon carbide single crystal wafer according to claim 3 , wherein a sum of the basal plane dislocation density and the threading screw dislocation density in the surface is 300 dislocations per cm 2 or less.
5. The silicon carbide single crystal wafer according to claim 1 , wherein the basal plane dislocation density in the surface is 100 dislocations per cm 2 or less.
6. The silicon carbide single crystal wafer according to claim 1 , wherein the threading screw dislocation density is 100 dislocations per cm 2 or less.
7. The silicon carbide single crystal wafer according to claim 1 , wherein a sum of the basal plane dislocation density and the threading screw dislocation density in the surface is 500 dislocations per cm 2 or less.
8. A silicon carbide single crystal wafer, which has a diameter of 100 mm or more, the silicon carbide single crystal wafer having, in a surface thereof, a basal plane dislocation (BPD) density of 100 dislocations per cm 2 or less, a threading screw dislocation (TSD) density of 300 dislocations per cm 2 or less, and a differential between a wavenumber of Raman scattered light measured at the center of the wafer and a wavenumber of Raman scattered light measured at a point located at 2 mm from a circumference of the wafer of 0.15 or less.
9. A silicon carbide single crystal wafer, which has a diameter of 100 mm or more, the silicon carbide single crystal wafer having, in a surface thereof, a basal plane dislocation (BPD) density of 300 dislocations per cm 2 or less, a threading screw dislocation (TSD) density of 300 dislocations per cm 2 or less, and a differential between a wavenumber of Raman scattered light measured at the center of the wafer and a wavenumber of Raman scattered light measured at a point located at 2 mm from a circumference of the wafer of 0.15 or less,
wherein a sum of the basal plane dislocation density and the threading screw dislocation density in the surface is 300 dislocations per cm 2 or less.
10. The silicon carbide single crystal wafer according to claim 8 or 9 , wherein the threading screw dislocation density is 200 dislocations per cm 2 or less.