Nanocrystal thin film fabrication methods and apparatus
Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.
1. A method of fabricating a nanocrystal thin film device that enables exposure to an air environment during a portion of the fabrication, the method comprising:
assembling a nanocrystal layer on a substrate;
depositing electrodes over the nanocrystal layer with a metal dopant present in the electrodes to form the nanocrystal thin film device;
annealing the nanocrystal thin film device to diffuse the deposited metal dopant into the nanocrystal layer to reduce surface states of the nanocrystal layer;
repeating the annealing to restore a portion of electrical properties of the nanocrystal thin film device; and
encapsulating the nanocrystal thin film device;
wherein the electrical properties of the nanocrystal thin film device diminish when expose to air.
2. The method of claim 1 , further comprising: the encapsulating the nanocrystal thin film device in a layer of Aluminum Tri-Oxide (Al2O3).
3. The method of claim 2 , wherein the annealing and encapsulating step are performed simultaneously.
4. The method of claim 1 , further comprising: patterning the nanocrystal layer in an air environment.
5. The method of claim 1 , wherein the metal dopant includes indium, potassium, or tin.
6. The method of claim 1 , wherein the depositing of the electrodes comprises photolithographically depositing the electrodes and wherein the method further comprises: depositing a porous oxide layer over the nanocrystal layer prior to depositing the electrodes to prevent delamination of the nanocrystal layer.