Insulated gate silicon carbide semiconductor device and method for manufacturing same

1. An insulated gate silicon carbide semiconductor device, comprising:

a silicon carbide substrate of 4H type with a {0001} plane having an off-angle of more than 0° as a main surface;

a drift layer of a first conductivity type provided on said silicon carbide substrate;

a first base region of a second conductivity type located on a surface side of said drift layer;

a source region of the first conductivity type located in said first base region;

a trench that penetrates said first base region and said source region and has a trench side wall formed of a plurality of surfaces;

a gate insulating film formed on said trench side wall in said trench;

a gate electrode buried in said trench through said gate insulating film;

a protective diffusion layer of the second conductivity type provided in said drift layer while being in contact with a bottom of said trench; and

a second base region of the second conductivity type provided in said drift layer while being in contact with part of said protective diffusion layer, part of said first base region, and at least part of only one surface of said plurality of surfaces of said trench side wall,

wherein said one surface of said trench side wall in contact with said second base region is a surface having a trench off-angle of more than 0° in a <0001>direction with respect to a plane parallel to the <0001>direction, and

said first base region is in contact with said trench.

2. The insulated gate silicon carbide semiconductor device according to claim 1 , wherein said source region contacts said plurality of surfaces of said trench side wall at a top of said second base region.

3. The insulated gate silicon carbide semiconductor device according to claim 1 , wherein each of said plurality of surfaces of said trench side wall has the same angle between said plurality of surfaces of said trench side wall and said main surface.

4. The insulated gate silicon carbide semiconductor device according to claim 1 , wherein said one surface of said trench side wall in contact with said second base region is a surface having said trench off-angle that is the largest among those of said plurality of surfaces of said trench side wall.

5. The insulated gate silicon carbide semiconductor device according to claim 1 , wherein said second base region and said protective diffusion layer are provided for each of all said trenches in an active region.

6. The insulated gate silicon carbide semiconductor device according to claim 1 , wherein a distance between said second base region and a trench sidewall surface on which said second base region is not formed is a distance more than or equal to a distance expressed by Math 1

(Third distance)×tan θ 3   [Math 1]

where a third distance represents a difference in depth between said first base region and said second base region and θ 3 represents a spread angle at which electrons spread in the <0001>direction from the <0001>direction in silicon carbide.

7. The insulated gate silicon carbide semiconductor device according to claim 1 , wherein said active region is formed of a group of grid-pattern or hexagonal cells.

8. The insulated gate silicon carbide semiconductor device according to claim 1 , further comprising:

a source electrode on part of a surface of said source region and said first base region; and

a drain electrode on a back surface of said silicon carbide substrate.

9. The insulated gate silicon carbide semiconductor device according to claim 1 , wherein said first conductivity type is an n-type, and said second conductivity type is a p-type.

10. The insulated gate silicon carbide semiconductor device according to claim 1 , wherein said insulated gate silicon carbide semiconductor device is any one of a trench MOSFET and a trench IGBT.

11. An insulated gate silicon carbide semiconductor device, comprising:

a silicon carbide substrate of 4H type with a {0001} plane having an off-angle of more than 0° as a main surface;

a drift layer of a first conductivity type provided on said silicon carbide substrate;

a first base region of a second conductivity type located on a surface side of said drift layer;

a source region of the first conductivity type located in said first base region;

a trench that penetrates said first base region and said source region and has a trench side wall formed of a plurality of surfaces;

a gate insulating film formed on said trench side wall in said trench;

a gate electrode buried in said trench through said gate insulating film;

a protective diffusion layer of the second conductivity type provided in said drift layer while being in contact with a bottom of said trench; and

a second base region of the second conductivity type provided in said drift layer while being in contact with part of said protective diffusion layer, part of said first base region, and an end of only one surface of said plurality of surfaces of said trench side wall,

wherein said one surface of said trench side wall in contact with said second base region is a surface having a trench off-angle of more than 0° in a <0001>direction with respect to a plane parallel to the <0001>direction, and

said first base region is in contact with said trench.

12. The insulated gate silicon carbide semiconductor device according to claim 11 , wherein said one surface of said trench side wall in contact with said second base region is a surface having said trench off-angle that is the largest among those of said plurality of surfaces of said trench side wall.

13. The insulated gate silicon carbide semiconductor device according to claim 11 , wherein said second base region and said protective diffusion layer are provided for each of all said trenches in an active region.