Light receiving and emitting device

1. A light receiving and emitting device, comprising:

a light receiving and emitting unit that comprises:

a plurality of pixels configured to:

receive first light, and

output an electric signal corresponding to an amount of the first light, based on photoelectric conversion; and

a plurality of light emitting units configured to emit second light, wherein an entirety of at least one light emitting unit of the plurality of light emitting units is on at least two pixels of the plurality of pixels in a light incident direction,

wherein a first number of light emitting units of the plurality of light emitting units is present for a second number of pixels of the plurality of pixels, and

wherein the first number is greater than or equal to two, and the second number is greater than the first number;

an imaging optical system configured to generate a first image on the plurality of pixels; and

a control unit configured to control the emission of the second light of each of the plurality of light emitting units.

2. The light receiving and emitting device according to claim 1 , wherein the control unit is further configured to recognize a second image captured based on the photoelectric conversion, and wherein the control of the emission of the second light is based on the recognition of the second image.

3. The light receiving and emitting device according to claim 2 , wherein the plurality of pixels is integrated with the plurality of light emitting units.

4. The light receiving and emitting device according to claim 3 , wherein the light receiving and emitting unit further includes one of:

a first reading unit that comprises a first substrate, wherein the first reading unit is configured to read electrons, wherein the first substrate comprises an n-type region, and wherein the n-type region comprises an n-type semiconductor;

a first photoelectric conversion unit that comprises a direct-transition-type p-type semiconductor on the n-type region,

wherein the first photoelectric conversion unit is configured to:

perform the photoelectric conversion,

function as the plurality of pixels, based on a first reverse bias voltage applied to a p-n junction of the first photoelectric conversion unit and the n-type region, and

function as the plurality of light emitting units based on a first forward bias voltage applied to the p-n junction of the first photoelectric conversion unit and the n-type region;

a transparent electron barrier layer on the first photoelectric conversion unit, wherein the transparent electron barrier layer is configured to serve as a barrier for the electrons; and

a first transparent electrode on the transparent electron barrier layer,

or

a second reading unit that comprises a second substrate, wherein the second substrate is configured to read holes, wherein the second substrate comprises a p-type region, and wherein the p-type region comprises a p-type semiconductor;

a second photoelectric conversion unit that comprises a direct-transition-type n-type semiconductor on the p-type region,

wherein the second photoelectric conversion unit is configured to:

perform the photoelectric conversion,

function as the plurality of pixels, based on a second reverse bias voltage applied to a p-n junction of the second photoelectric conversion unit and the p-type region, and

function as the plurality of light emitting units, based on a second forward bias voltage applied to the p-n junction of the second photoelectric conversion unit and the p-type region;

a transparent hole barrier layer on the second photoelectric conversion unit, wherein the transparent hole barrier layer is configured to serve as a barrier for the holes; and

a second transparent electrode on the transparent hole barrier layer.

5. The light receiving and emitting device according to claim 3 , wherein the light receiving and emitting unit further includes:

a pixel electrode;

a reading unit configured to read electrons via the pixel electrode;

an electron transport layer on the pixel electrode, wherein the electron transport layer is configured to transport the electrons;

a light emitting photoelectric conversion unit on the electron transport layer;

a hole transport layer on the light emitting photoelectric conversion unit, wherein the hole transport layer is configured to transport holes; and

a transparent electrode on the hole transport layer,

wherein the light emitting photoelectric conversion unit is configured to:

function as the plurality of pixels, when a first voltage applied to the pixel electrode is greater than a second voltage applied to the transparent electrode, and

function as the plurality of light emitting units, based on the first voltage that is less than the second voltage.

6. The light receiving and emitting device according to claim 2 , wherein the light receiving and emitting unit further includes:

an image sensor unit that comprises photo diodes (PDs), wherein the PDs serve as the plurality of pixels,

wherein the at least one light emitting unit of the plurality of light emitting units overlaps a first photo diode of the PDs and a second photo diode of the PDs, and wherein the plurality of light emitting units have one of a double heterostructure or a structure of a multilayer reflector.

7. The light receiving and emitting device according to claim 6 , wherein each of the plurality of light emitting units comprises an electrode, wherein the electrode is at a side of each of the plurality of light emitting units, wherein the side faces the image sensor unit, and wherein the electrode is configured to serve as a light blocking film.

8. The light receiving and emitting device according to claim 2 , wherein the first number of the plurality of light emitting units varies based on a position of the plurality of light emitting units.

9. The light receiving and emitting device according to claim 1 , wherein the control unit is further configured to:

control a capture of a second image, wherein the second image is captured at a first time based on the photoelectric conversion; and

control the plurality of light emitting units to emit the second light at a second time.

10. The light receiving and emitting device according to claim 1 , wherein the plurality of pixels is integrated with the plurality of light emitting units, and wherein the output of the electric signal and the emission of the second light are based on a direction in which a bias voltage is applied to the plurality of pixels integrated with the plurality of light emitting units.

11. The light receiving and emitting device according to claim 1 , wherein each of the plurality of light emitting units comprises one of a group III-V compound, a group II-VI compound, a group I-III-VI compound, or a compound semiconductor material containing one of quantum dots, or a quantum well of one of the group III-V compound, the group II-VI compound, or the group I-III-VI compound.

12. The light receiving and emitting device according to claim 1 , wherein each of the plurality of light emitting units comprises an organic material.

13. The light receiving and emitting device according to claim 1 , wherein the control unit is configured to transmit first information, based on the emission of the second light by the plurality of light emitting units, and wherein the plurality of light emitting units corresponds to a specific position of a second image captured based on the photoelectric conversion.

14. The light receiving and emitting device according to claim 13 , wherein the control unit is further configured to receive second information based on the reception of the first light by the plurality of pixels, and wherein the plurality of pixels corresponds to the specific position.

15. The light receiving and emitting device according to claim 14 , wherein the control unit is further configured to:

transmit third information to a plurality of devices, based on the emission of the second light by the plurality of light emitting units, wherein the plurality of light emitting units corresponds to a plurality of specific positions of the second image captured based on the photoelectric conversion, and

receive fourth information from the plurality of devices, based on the reception of the first light by the plurality of pixels, wherein the plurality of pixels corresponds to the plurality of specific positions.

16. The light receiving and emitting device according to claim 14 , further comprising:

a light emitting unit, different from the plurality of light emitting units, configured to transmit identification information, wherein the control unit is further configured to exchange third information with a device, based on the device identified based on the identification information.

17. A light receiving and emitting device, comprising:

a light receiving and emitting unit that comprises:

a plurality of pixels configured to:

receive first light, and

output an electric signal corresponding to an amount of the first light, based on photoelectric conversion;

a plurality of light emitting units configured to emit second light, wherein an entirety of at least one light emitting unit of the plurality of light emitting units is on at least two pixels of the plurality of pixels in a light incident direction,

wherein a first number of light emitting units of the plurality of light emitting units is present for a second number of pixels of the plurality of pixels, and

wherein the first number is greater than or equal to two and the second number is greater than the first number; and

an image sensor unit that comprises photo diodes (PDs), wherein the PDs constitute the plurality of pixels, and wherein the plurality of light emitting units has one of a double heterostructure or a structure of a multilayer reflector;

an imaging optical system configured to generate a first image on the plurality of pixels; and

a control unit configured to control the emission of the second light of each of the plurality of light emitting units.

18. A light receiving and emitting device, comprising:

a light receiving and emitting unit that comprises:

a plurality of pixels configured to:

receive first light, and

output an electric signal corresponding to an amount of the first light, based on photoelectric conversion, and

a plurality of light emitting units configured to emit second light,

wherein a first number of light emitting units of the plurality of light emitting units is present for a second number of pixels of the plurality of pixels,

wherein the first number is greater than or equal to two and the second number is greater than the first number, and

wherein the plurality of pixels is integrated with the plurality of light emitting units, and wherein the output of the electric signal and the emission of the second light are based on a direction in which a bias voltage is applied to the plurality of pixels integrated with the plurality of light emitting units;

an imaging optical system configured to generate a first image on the plurality of pixels; and

a control unit configured to control the emission of the second light of each of the plurality of light emitting units.