Hard aluminum films formed using high current density plating
The described embodiments relate generally to aluminum films and methods for forming aluminum films. Methods involve providing aluminum films having increased hardness. Methods involve using higher than conventional current densities during plating of aluminum on substrates. The higher current density plating creates aluminum films with grain structures that are different from conventional plated aluminum films. In some embodiments, the average grain sizes are smaller in the hard aluminum films than conventional plated aluminum films. In some embodiments, the plated aluminum layer is anodized. In some embodiments, a multi-layered aluminum coating is formed using a combination of high current density and low current density plating. In some embodiments, a current filter is used to provide uniform plating across a part.
1. A method of forming a multi-layered aluminum coating on a substrate, the method comprising:
electrodepositing a first portion of an aluminum layer on the substrate using a first current density causing the first portion to have a first average grain size; and
electrodepositing a second portion of the aluminum layer on the first portion of the aluminum layer using a second current density, lower than the first current density, causing the second portion of the aluminum layer to have a second average grain size larger than the first average grain size.
2. The method of claim 1 , further comprising:
converting at least part of the second portion to an aluminum oxide layer.
3. The method of claim 2 , further comprising:
converting least part of the first portion to a second aluminum oxide layer.
4. The method of claim 1 , wherein the first average grain size ranges from about 0.1 and about 4.0 micrometers.
5. The method of claim 1 , wherein the first portion is characterized as having a hardness value greater than a hardness value of the second portion.
6. The method of claim 1 , wherein the second portion is optically brighter than the first portion.
7. The method of claim 1 , wherein the first portion is characterized as having more grain boundaries per unit volume than the second portion.
8. The method of claim 1 , wherein the first current density ranges from about 1.0 A/dm 2 and about 10.0 A/dm 2 and the second current density ranges from about 0.1 A/dm 2 and about 1.5 A/dm 2 independent of the first current density.