Pattern-measuring apparatus and semiconductor-measuring system
View Patent ↗An object of the present invention is to provide a pattern-measuring apparatus and a semiconductor-measuring system which are able to obtain an evaluation result for suitably selecting processing with respect to a semiconductor device. In the present invention for attaining the object described above, there is proposed a pattern-measuring apparatus including an arithmetic device which compares a circuit pattern of an electronic device with a reference pattern, in which the arithmetic device classifies the circuit pattern in processing unit of the circuit pattern on the basis of a comparison of a measurement result between the circuit pattern and the reference pattern with at least two threshold values.
1. A pattern-measuring apparatus comprising an arithmetic device including processing circuitry and a non-transitory memory storing a program which compares a circuit pattern of an electronic device with a reference pattern,
wherein, the program, when executed by the processing circuitry, causes the arithmetic device to:
receive a captured image signal from a charged particle beam device;
extract a pattern edge in the captured image signal;
read a reference pattern having been stored in the non-transitory memory;
measure a distance between each of a plurality of measurement points in the circuit pattern and each of a plurality of points in the reference pattern corresponding thereto;
calculate a second measurement result, by a statistic arithmetic operation between a first measurement result, having been measured including a predetermined condition, and either one of:
a measurement result within a predetermined range including the plurality of points in the reference pattern, and
another measurement result that is different from the first measurement result and has a value that is larger than the first measurement result; classify the second measurement result into either one of targets:
for being monitored in an event that an amount of the second measurement result is within a range between a first threshold value and a second threshold value smaller than the first threshold value, and
for being used for correcting a design pattern or a mask of the circuit pattern; and
store a result of classifying the second measurement result in the non-transitory memory.
2. The pattern-measuring apparatus according to claim 1 ,
wherein the predetermined condition relates to at least an edge point on the reference pattern having a longest distance with respect to the pattern edge.
3. The pattern-measuring apparatus according to claim 1 ,
wherein the arithmetic device classifies a measurement target pattern of a first layer which is a measurement target according to determination of whether or not a pattern of a second layer which is connected to the measurement target pattern exists.
4. The pattern-measuring apparatus according to claim 3 ,
wherein the arithmetic device classifies a measurement portion of the circuit pattern on the basis of relationship information of a measurement result between the circuit pattern and the reference pattern, and the second layer of the measurement portion of the circuit pattern.
5. A non-transitory memory storing a computer program for causing processing circuitry to compare a circuit pattern of an electronic device with a reference pattern, wherein the program, when executed by the processing circuitry, causes the processing circuitry to:
receive a captured image signal from a charged particle beam device;
extract a pattern edge in the captured image signal;
read a reference pattern having been stored in the non-transitory memory;
measure a distance between each of a plurality of measurement points in the circuit pattern and each of a plurality of points in the reference pattern corresponding thereto;
calculate a second measurement result, by a statistic arithmetic operation between a first measurement result, having been measured including a predetermined condition, and either one of:
a measurement result within a predetermined range including the plurality of points in the reference pattern, and
another measurement result that is different from the first measurement result and has a value that is larger than the first measurement result; classify the second measurement result into either one of targets:
for being monitored in an event that an amount of the second measurement result is within a range between a first threshold value and a second threshold value smaller than the first threshold value, and
for being used for correcting a design pattern or a mask of the circuit pattern; and
store a result of classifying the second measurement result in the non-transitory memory.