IP Library Granted Patent US 10,145,024
Granted Patent B2
US 10,145,024 · App. 14/771,632 · Granted Dec 4, 2018

Cooling rate control apparatus and ingot growing apparatus including same

Inventors: Won-Ju Lee (Gumi-si, KR); Su-In Jeon (Gumi-si, KR)
Assignee: SK SILTRON CO., LTD.
C30B15/206C30B15/14C30B29/06Y10T117/1032
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Quick Facts
Patent No.
US 10,145,024
App. No.
14/771,632
Granted
Dec 4, 2018
Kind
B2
Abstract

The present disclosure relates to an apparatus for growing an ingot from silicon melt contained in a crucible by using a seed crystal, the apparatus comprising a chamber including a lower portion for accommodating the crucible and an upper portion through which the growing ingot passes, and a cooling rate control unit which is disposed at the upper portion of the chamber to extend to the lower portion of the chamber and has a hole through which the growing ingot passes, wherein the cooling rate control unit comprises an insulation part for insulating the ingot, a cooling part disposed over the insulation part to cool the ingot, and a blocking part disposed between the insulation part and the cooling part to prevent heat exchange therebetween.

Claims (20)

1. An ingot growing apparatus for growing an ingot from silicon melt contained in a crucible by using a seed crystal, the apparatus comprising:

a chamber including a lower portion for accommodating the crucible and an upper portion disposed over the lower portion, the ingot being cooled as the ingot vertically moves from the lower portion to the upper portion;

a heat shielding body disposed over the crucible, the heat shielding body corresponding to a first temperature zone in which the ingot is cooled from 1,414° C. to 1,080° C.;

an insulation part having a first ring shape and disposed over the heat shielding body to insulate the ingot, the insulation part corresponding to a second temperature zone in which an outer portion of the ingot is cooled from 800° C. to 450° C.;

a first frame part surrounding the insulation part;

a cooling part having a third ring shape corresponding to the first ring shape and disposed on the insulation part to cool the ingot, the cooling part corresponding to a third temperature zone in which the outer portion of the ingot is cooled from 450° C. to 400° C.;

a third frame part surrounding the cooling part and connected to the upper portion of the chamber;

a blocking part having a second ring shape corresponding to each of the first and third ring shapes and disposed between the insulation part and the cooling part to prevent heat exchange therebetween; and

a second frame part surrounding the blocking part and downwardly inserted into the first frame part and upwardly inserted into the third frame part,

wherein the first frame part, the second frame part and the third frame part are made of different materials, the first frame part being made of graphite, an inner wall surface of the first frame part being coated with a reflective material, the third frame part being made of stainless steel, and an inner wall surface of the third frame part being coated with a heat absorbing material.

2. The ingot growing apparatus of claim 1 , wherein the insulation part is made of an insulator of carbon felt.

3. The ingot growing apparatus of claim 1 , wherein the blocking part is in a vacuum state between the insulation part and the cooling part.

4. The ingot growing apparatus of claim 1 , wherein the cooling part comprises a water-cooled tube for cooling the ingot along the inner wall of the upper portion of the chamber.

5. The ingot growing apparatus of claim 1 , wherein the heat shielding body having a hole through which the growing ingot passes, as an insulating unit disposed over the crucible,

wherein the insulation part extends to the toward a top surface of the heat shielding body.

6. The ingot growing apparatus of claim 1 , wherein the ratio of vertical lengths of the cooling part, the blocking part, and the insulation part is 2:1:1.

7. The ingot growing apparatus of claim 1 , wherein the cooling part comprises a water-cooled tube, an inlet for injecting cooling water into the water-cooled tube, and an outlet for discharging the cooling water.

8. The ingot growing apparatus of claim 1 , wherein the insulation part comprises a gas inlet, a gas transfer tube, and a gas outlet.

9. The ingot growing apparatus of claim 1 , wherein the insulation part is formed such that a size of a hole through which the ingot passes gradually increases.

10. The ingot growing apparatus of claim 9 , wherein the insulation part has a dome shape to gradually increase the size of the hole.

Assignments (2)
CHANGE OF NAME Recorded Aug 9, 2018
From: LG SILTRON INCORPORATED
To: SK SILTRON CO., LTD.
Reel/Frame 047293/0646 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 31, 2015
From: LEE, WON-JU; JEON, SU-IN
To: LG SILTRON INC.
Reel/Frame 036459/0517 →
Priority Claims (1)
KR 10-2013-0109152 · Sep 11, 2013 · national
Continuity (1)
Related Publication 20160017514A1 · Jan 21, 2016