IP Library Granted Patent US 9,668,063
Granted Patent B2
US 9,668,063 · App. 14/772,108 · Granted May 30, 2017

Capacitance type sensor, acoustic sensor, and microphone

Inventor: Yuki Uchida (Kyoto, JP)
Assignee: OMRON Corporation
H04R19/04B81B3/00G10K11/002H04R1/245H04R3/002H04R3/06H04R7/06H04R19/005H04R1/04H04R3/005H04R2201/003H04R2410/03H04R2499/11
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Quick Facts
Patent No.
US 9,668,063
App. No.
14/772,108
Granted
May 30, 2017
Kind
B2
Abstract

A chamber that penetrates vertically is formed in a silicon substrate. A diaphragm is arranged on the upper surface of the silicon substrate so as to cover the upper opening of the chamber. The diaphragm is divided by slits into a region located above the chamber (first diaphragm) and a region located above the upper surface of the silicon substrate (second diaphragm). A fixed electrode plate is arranged above the first diaphragm, and a low-volume first acoustic sensing portion is formed by the first diaphragm and the fixed electrode plate. Also, a high-volume second acoustic sensing portion is formed by the second diaphragm and the upper surface (electrically conducting layer) of the silicon substrate.

Claims (22)

1. A capacitive sensor comprising:

a substrate having a cavity that is open at least at an upper surface;

a vibrating electrode plate formed above the substrate so as to cover an upper portion of the cavity;

a back plate formed above the substrate so as to cover the vibrating electrode plate; and

a fixed electrode plate provided on the back plate,

wherein the vibrating electrode plate is divided into a region located above the cavity and a region located above an upper surface of the substrate,

a first sensing portion is formed by the fixed electrode plate and the region of the vibrating electrode plate located above the cavity, and

a second sensing portion is formed by the upper surface of the substrate and the region of the vibrating electrode plate located above the upper surface of the substrate.

2. The capacitive sensor according to claim 1 , wherein the vibrating electrode plate is divided, by a slit formed in the vibrating electrode plate, into a region that constitutes the first sensing portion and a region that constitutes the second sensing portion.

3. The capacitive sensor according to claim 1 , wherein in a view from above the substrate, the fixed electrode plate is formed at a position that is not overlapped with a region of the vibrating electrode plate that constitutes the second sensing portion.

4. The capacitive sensor according to claim 1 , wherein the vibrating electrode plate is divided into a region that constitutes the first sensing portion and a region that constitutes the second sensing portion, at a position shifted toward an interior of the cavity relative to an edge of an upper opening of the cavity.

5. The capacitive sensor according to claim 1 , wherein the upper surface of the substrate is subjected to electrical conductivity processing.

6. The capacitive sensor according to claim 1 , wherein a substrate electrode is formed on the upper surface of the substrate so as to oppose a region of the vibrating electrode plate that constitutes the second sensing portion.

7. The capacitive sensor according to claim 1 , wherein a region of the vibrating electrode plate that constitutes the first sensing portion and a region of the vibrating electrode plate that constitutes the second sensing portion are partially continuous.

8. The capacitive sensor according to claim 1 , wherein a lower surface of an outer peripheral edge of a region of the vibrating electrode plate that constitutes the second sensing portion is supported by a fixing portion provided on the upper surface of the substrate.

9. The capacitive sensor according to claim 1 , wherein an area of a region of the vibrating electrode plate that constitutes the second sensing portion is smaller than an area of a region of the vibrating electrode plate that constitutes the first sensing portion.

10. The capacitive sensor according to claim 1 , wherein a region of the vibrating electrode plate that constitutes the second sensing portion is further divided into a region that has a comparatively large area and a region that has a comparatively small area.

11. An acoustic sensor employing the capacitive sensor according to claim 1 ,

wherein a plurality of holes for allowing passage of acoustic vibration is formed in the back plate and the fixed electrode plate, and

signals of different sensitivities are output from the first sensing portion and the second sensing portion.

12. A microphone comprising the acoustic sensor according to claim 11 and a circuit portion that amplifies a signal from the acoustic sensor and outputs the amplified signal to the outside.

13. The microphone according to claim 12 , wherein the circuit portion includes a phase inversion circuit that inverts the phase of one output signal out of an output signal from the first sensing portion and an output signal from the second sensing portion.

Assignments (3)
DE-MERGER Recorded May 20, 2022
From: OMRON CORPORATION
To: SHIGA SEMICONDUCTOR CO., LTD.
Reel/Frame 060132/0451 →
CHANGE OF NAME AND ADDRESS Recorded May 20, 2022
From: SHIGA SEMICONDUCTOR CO., LTD.
To: MMI SEMICONDUCTOR CO., LTD.
Reel/Frame 060132/0466 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 2, 2015
From: UCHIDA, YUKI
To: OMRON CORPORATION
Reel/Frame 036476/0032 →
Priority Claims (1)
JP 2013-050709 · Mar 13, 2013 · national
Continuity (1)
Related Publication 20160037266A1 · Feb 4, 2016