Control-electrode shielding for improved linearity of a MEMS DVC device
The present invention generally relates to a MEMS DVC having a shielding electrode structure between the RF electrode and one or more other electrodes that cause a plate to move. The shielding electrode structure may be grounded and, in essence, block or shield the RF electrode from the one or more electrodes that cause the plate to move. By shielding the RF electrode, coupling of the RF electrode to the one or more electrodes that cause the plate to move is reduced and capacitance modulation is reduced or even eliminated.
1. A MEMS DVC, comprising:
a first dielectric layer having a first electrode, an RF electrode, and a shielding electrode disposed therein wherein the shielding electrode is disposed adjacent the RF electrode and the first electrode and wherein the shielding electrode is grounded;
a second dielectric layer disposed over the first electrode, the RF electrode and the shielding electrode;
a second electrode disposed opposite the first electrode and having a third dielectric layer thereover; and
a movable electrode movable from a position in contact with the second dielectric layer and a position in contact with the third dielectric layer, wherein the shielding electrode extends into the first dielectric layer for a depth that is equal to or greater than a distance that either the RF electrode or the first electrode extend into the first dielectric layer.
2. The MEMS DVC of claim 1 , further comprising a ground electrode coupled to the movable electrode, wherein the shielding electrode is coupled to the ground electrode.
3. The MEMS DVC of claim 2 , further comprising an underneath shield electrode disposed within the first dielectric layer, wherein the underneath shield electrode is disposed at least partially under the first electrode and is spaced from the first electrode by the first dielectric layer, and wherein the shielding electrode is coupled to the underneath shield electrode.
4. The MEMS DVC of claim 3 , further comprising a first shielding via coupling the shielding electrode to the underneath shield electrode.
5. The MEMS DVC of claim 4 , further comprising a second shielding via coupled to the underneath shield electrode and the ground electrode.
6. The MEMS DVC of claim 5 , wherein the first electrode, the RF electrode and the shielding electrode comprise the same material.
7. A MEMS DVC, comprising:
a first dielectric layer having a first electrode, an RF electrode, and a shielding electrode disposed therein wherein the shielding electrode is disposed adjacent the RF electrode and the first electrode and wherein the shielding electrode is grounded;
a second dielectric layer disposed over the first electrode, the RF electrode and the shielding electrode;
a second electrode disposed opposite the first electrode and having a third dielectric layer thereover; and
a movable electrode movable from a position in contact with the second dielectric layer and a position in contact with the third dielectric layer, further comprising an underneath shield electrode disposed within the first dielectric layer, wherein the underneath shield electrode is disposed at least partially under the first electrode and is spaced from the first electrode by the first dielectric layer, and wherein the shielding electrode is coupled to the underneath shield electrode.
8. The MEMS DVC of claim 7 , further comprising a first shielding via coupling the shielding electrode to the underneath shield electrode.
9. The MEMS DVC of claim 8 , further comprising a second shielding via coupled to the underneath shield electrode and the ground electrode.
10. The MEMS DVC of claim 9 , wherein the first electrode, the RF electrode and the shielding electrode comprise the same material.