Vapor deposition mask, vapor deposition mask preparation body, method for producing vapor deposition mask, and method for producing organic semiconductor element
There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a slit 15 is provided and a resin mask 20 in which openings 25 corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit 15 are stacked, and the metal mask 10 has a general region 10 a in which the slit 15 is provided and a thick region 10 b larger in thickness than the general region.
1. A method for producing an organic semiconductor element, comprising
a step of forming a vapor deposition pattern on a vapor deposition target by using a frame-equipped vapor deposition mask in which a vapor deposition mask is fixed to a frame, wherein
the vapor deposition mask fixed to the frame in the step of forming the vapor deposition pattern includes: a metal mask in which a slit is provided; and a resin mask in which openings corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit, the metal mask and the resin mask being stacked, wherein the resin mask has a first surface arranged to face the vapor deposition target and an opposed second surface, and the metal mask covers at least a portion of the second surface of the resin mask, and the metal mask has a general region in which the slit is provided and a thick region larger in thickness than the general region.
2. The method for producing an organic semiconductor element according to claim 1 , wherein a thickness of the general region is from 5 μm to 25 μm.
3. The method for producing an organic semiconductor element according to claim 1 , wherein the thick region is 5 μm larger in thickness than the general region.
4. The method for producing an organic semiconductor element according to claim 1 , wherein a thick region is 5 μm larger in thickness than the general region and a thickness of the thick region is equal to or more than 15 μm and equal to or less than 100 μm.
5. The method for producing an organic semiconductor element according to claim 1 , wherein the general region is surrounded by the thick region.
6. The method for producing an organic semiconductor element according to claim 1 , wherein the thick region in one row extending in the crosswise direction or the lengthwise direction is disposed between slits.
7. The method for producing an organic semiconductor element according to claim 1 , wherein the thick region is disposed in a grid shape.
8. The method for producing an organic semiconductor element according to claim 1 , wherein the frame is made of metal and the thick region of the metal mask is fixed to the frame by spot welding.
9. The method for producing an organic semiconductor element according to claim 1 , wherein the general region covers a larger area than the thick region.
10. The method for producing an organic semiconductor element according to claim 1 , wherein the frame is made of an invar material.
11. The method for producing an organic semiconductor element according to claim 1 , wherein the frame includes a reinforcement frame inside thereof, the reinforcement frame disposed between openings adjacent to each other whereby the reinforcement frame exists within a range where the exposure of the openings of the resin mask is not prevented.