Advanced CPV solar cell assembly process

1. A solar cell assembly structure, comprising:

a concentrator photovoltaic cell structure;

a diode; and

a semiconductor structure, comprising:

a first conductive region, the concentrator photovoltaic cell structure disposed on at least a part of the first conductive region, the first conductive region being doped n-type or p-type with a dopant concentration greater than 1E18 cm −3 ; and

a second conductive region doped with the same type of dopant as the first conductive region and with a lower concentration as the first conductive region, the diode disposed within or on the second conductive region; and

an electrically conductive substrate electrically connecting the first conducting region and the second conducting region and providing a back contact between the diode and the photovoltaic cell; and

wherein the first and second conductive regions do not vertically overlap with one another and are arranged in the same horizontal plane.

2. The solar cell assembly structure according to claim 1 , further comprising an electrical contact pad in electrical contact with each of the diode and the concentrator photovoltaic cell structure.

3. The solar cell assembly structure according to claim 2 , wherein the first and second conductive regions comprise a semiconductor material.

4. The solar cell assembly structure according to claim 3 , wherein the electrically conductive substrate comprises a metal.

5. The solar cell assembly structure according to claim 1 , wherein the diode comprises a first doped region and a second doped region, and wherein the first and second doped regions have different polarity.

6. The solar cell assembly structure according to claim 5 , wherein the polarity of the diode is p-type on n-type, with a positive pole contacting a front contact and a negative pole contacting the first conductive region.

7. The solar cell assembly structure according to claim 6 , wherein the first conducting region of the semiconductor structure has the same type of doping as the second doped region of the diode.

8. The solar cell assembly structure according to claim 7 , wherein the first and/or second doped regions are realized via diffusion doping and/or epitaxial growth.

9. A solar cell assembly comprising a plurality of solar cell assembly structures according to claim 7 mounted on a heat sink.

10. The solar cell assembly according to claim 9 , wherein the concentrator photovoltaic cell structure and the diode of each solar cell assembly structure of the plurality are bonded on the first and second conductive regions, respectively, using molecular or direct bonding.

11. The solar cell assembly according to claim 10 , wherein the diode is connected in an antiparallel manner to the concentrator photovoltaic cell structure.

12. The solar cell assembly according to claim 11 , wherein the concentrator photovoltaic cell structure is a multi-junction cell made of a III-V compound semiconductor, the III-V compound semiconductor selected from the group consisting of InGaAs, InGaAsP, GaAs, and InGaP.

13. The solar cell assembly according to claim 12 , wherein the concentrator photovoltaic cell structure has a thickness lower than 10 μm.

14. The solar cell assembly according to claim 13 , wherein the concentrator photovoltaic cell structure comprises a bottom layer made of p-doped material and the first conductive region is p-doped, and molecular bonding is realized between the p-doped bottom layer and the first conductive region, and is a p-p bonding, type.

15. The solar cell assembly according to claim 13 , wherein the concentrator photovoltaic cell structure comprises a top layer made of n-doped material and a bottom layer made of p-doped material and further comprises a p-n tunnel diode realized on the bottom layer, the first conductive region is n-doped, and molecular bonding is realized between a free n-doped face of the tunnel diode and the first conductive region, and is an n-n bonding type.

16. The solar cell assembly according to claim 13 , with an area ratio between the solar cell assembly, structure and the concentrator photovoltaic cell structure in the range from 1.2 to 1 up to 10 to 1.

17. The solar cell assembly according to claim 13 , wherein the solar cell assembly structures of the plurality are mounted on the heat sink via an adhesive.

18. A plurality of solar cell assembly structures according to claim 8 , wherein the plurality of solar cell assembly structures is realized on a wafer with a diameter of 2 inches, 4 inches, 6 inches, 8 inches, 11 inches, or 400 cm and made of silicon or silicon on molybdenum.

19. The solar cell assembly structure according to claim 2 , wherein the first and second conductive regions comprise Si.

20. The solar cell assembly structure according to claim 2 , wherein the first and second conductive regions comprise Ge.

21. The solar cell assembly structure according to claim 2 , wherein the first and second conductive regions comprise SiGe.

22. The solar cell assembly structure according to claim 3 , wherein the electrically conductive substrate comprises molybdenum.

23. The solar cell assembly structure according to claim 3 , wherein the electrically conductive substrate comprises tungsten.

24. The solar cell assembly according to claim 9 , wherein the concentrator photovoltaic cell structure and the diode are bonded on the first and second conductive regions, respectively, using thermal compression bonding.

25. The solar cell assembly according to claim 9 , wherein the concentrator photovoltaic cell structure and the diode are bonded on the first and second conductive regions, respectively, using metallic bonding.

26. The solar cell assembly according to claim 16 , with an area ratio between the solar cell assembly structure and the concentrator photovoltaic cell structure in the range from 2 to 1 up to 4 to 1.